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Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.

Tran BT, Hirayama H, Maeda N, Jo M, Toyoda S, Kamata N - Sci Rep (2015)

Bottom Line: High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates.The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves.

View Article: PubMed Central - PubMed

Affiliation: Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 10(8) cm(-2) (screw), 3.7 × 10(8) (edge) cm(-2)).

No MeSH data available.


Related in: MedlinePlus

Vertical growth rate as a function of the V/III ratio (blue line).At a V/III ratio of 150 in sample C, a very low FWHM has been obtained.
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f4: Vertical growth rate as a function of the V/III ratio (blue line).At a V/III ratio of 150 in sample C, a very low FWHM has been obtained.

Mentions: For investigation of the V/III ratio versus the growth rate and the crystalline quality (FWHM), the next four samples had different V/III ratios of 115, 150, 210, and 345 and named samples E, C, F, and G, respectively. Samples E, F, and G were grown under the same conditions as sample C, except for the V/III ratio, which was controlled by the TMAl flow. Figure 4 shows the V/III ratio versus the FWHM and the growth rate of the AlN template. The vertical growth rate of the AlN template shown as a function of V/III ratio increases with the decrease in the V/III ratio (blue line). The highest growth rate was 66 nm/min, which is very high compared with other recently reported growth rates11192021. However, the FWHM was not a function of the V/III ratio. Around a V/III ratio of 150 in sample C, the FWHM increased quickly. The FWHM profile was similar to that of the AlN template grown on stripe patterned AlN/sapphire19, although the variance of the FWHM profile was larger. This may be caused by the direct growth of the AlN template on the Si substrate.


Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.

Tran BT, Hirayama H, Maeda N, Jo M, Toyoda S, Kamata N - Sci Rep (2015)

Vertical growth rate as a function of the V/III ratio (blue line).At a V/III ratio of 150 in sample C, a very low FWHM has been obtained.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4593966&req=5

f4: Vertical growth rate as a function of the V/III ratio (blue line).At a V/III ratio of 150 in sample C, a very low FWHM has been obtained.
Mentions: For investigation of the V/III ratio versus the growth rate and the crystalline quality (FWHM), the next four samples had different V/III ratios of 115, 150, 210, and 345 and named samples E, C, F, and G, respectively. Samples E, F, and G were grown under the same conditions as sample C, except for the V/III ratio, which was controlled by the TMAl flow. Figure 4 shows the V/III ratio versus the FWHM and the growth rate of the AlN template. The vertical growth rate of the AlN template shown as a function of V/III ratio increases with the decrease in the V/III ratio (blue line). The highest growth rate was 66 nm/min, which is very high compared with other recently reported growth rates11192021. However, the FWHM was not a function of the V/III ratio. Around a V/III ratio of 150 in sample C, the FWHM increased quickly. The FWHM profile was similar to that of the AlN template grown on stripe patterned AlN/sapphire19, although the variance of the FWHM profile was larger. This may be caused by the direct growth of the AlN template on the Si substrate.

Bottom Line: High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates.The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves.

View Article: PubMed Central - PubMed

Affiliation: Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 10(8) cm(-2) (screw), 3.7 × 10(8) (edge) cm(-2)).

No MeSH data available.


Related in: MedlinePlus