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Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.

Tran BT, Hirayama H, Maeda N, Jo M, Toyoda S, Kamata N - Sci Rep (2015)

Bottom Line: High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates.The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves.

View Article: PubMed Central - PubMed

Affiliation: Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 10(8) cm(-2) (screw), 3.7 × 10(8) (edge) cm(-2)).

No MeSH data available.


Related in: MedlinePlus

FWHMs of the XRD rocking curves in the symmetric (002) and asymmetric (102) planes of AlN templates grown with different first AlN layer growth times.
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f2: FWHMs of the XRD rocking curves in the symmetric (002) and asymmetric (102) planes of AlN templates grown with different first AlN layer growth times.

Mentions: Figure 2 shows summarizes the full width at half-maximum (FWHM) of the XRD rocking curves of the AlN templates with the first AlN layer grown for different times. The FWHMs of the (002) and (102) reflection planes of the AlN templates decreased with increasing growth time of the first AlN layer from 5 to 10 min and slightly increased with the increase of the growth time from 10 to 11 min. The lowest FWHM value was obtained at a growth time of 10 min in sample C with values of 0.23° (002) and 0.37° (102), compared with 0.97° (002) and 1.30° (102) for sample A, 0.42° (002) and 0.83° (102) for sample B, and 0.36° (002) and 0.39° (102) for sample D. Thus, a suitable growth time for the first AlN layer enabled a reduction in AlN/mPSiS threading dislocations by up to about 4 times. A high growth rate was important for obtaining these results11. Sample C was grown at a rate of more than 50 nm/min with a V/III ratio of about 150, which was a very high growth rate compared with recent studies11192021. The details of V/III ratio and growth rate will be discussed later.


Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.

Tran BT, Hirayama H, Maeda N, Jo M, Toyoda S, Kamata N - Sci Rep (2015)

FWHMs of the XRD rocking curves in the symmetric (002) and asymmetric (102) planes of AlN templates grown with different first AlN layer growth times.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4593966&req=5

f2: FWHMs of the XRD rocking curves in the symmetric (002) and asymmetric (102) planes of AlN templates grown with different first AlN layer growth times.
Mentions: Figure 2 shows summarizes the full width at half-maximum (FWHM) of the XRD rocking curves of the AlN templates with the first AlN layer grown for different times. The FWHMs of the (002) and (102) reflection planes of the AlN templates decreased with increasing growth time of the first AlN layer from 5 to 10 min and slightly increased with the increase of the growth time from 10 to 11 min. The lowest FWHM value was obtained at a growth time of 10 min in sample C with values of 0.23° (002) and 0.37° (102), compared with 0.97° (002) and 1.30° (102) for sample A, 0.42° (002) and 0.83° (102) for sample B, and 0.36° (002) and 0.39° (102) for sample D. Thus, a suitable growth time for the first AlN layer enabled a reduction in AlN/mPSiS threading dislocations by up to about 4 times. A high growth rate was important for obtaining these results11. Sample C was grown at a rate of more than 50 nm/min with a V/III ratio of about 150, which was a very high growth rate compared with recent studies11192021. The details of V/III ratio and growth rate will be discussed later.

Bottom Line: High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates.The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves.

View Article: PubMed Central - PubMed

Affiliation: Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 10(8) cm(-2) (screw), 3.7 × 10(8) (edge) cm(-2)).

No MeSH data available.


Related in: MedlinePlus