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Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.

Tran BT, Hirayama H, Maeda N, Jo M, Toyoda S, Kamata N - Sci Rep (2015)

Bottom Line: High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates.The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves.

View Article: PubMed Central - PubMed

Affiliation: Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 10(8) cm(-2) (screw), 3.7 × 10(8) (edge) cm(-2)).

No MeSH data available.


Related in: MedlinePlus

Steps for fabricating a mPSiS by using standard photolithography and ICP etching techniques (a–f).Si substrate after treated with a BOE (a), deposited SiO2 by PECVD (b) and coated a photoresist layer (c). Using standard photolithography to lithograph the mask (d), then etched the mask (SiO2) (e,g) and Si substrate (f ). Finally, Si substrate etched (mPSiS) with SiO2 has been removed (inset shows cross-sectional image) (h).
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f1: Steps for fabricating a mPSiS by using standard photolithography and ICP etching techniques (a–f).Si substrate after treated with a BOE (a), deposited SiO2 by PECVD (b) and coated a photoresist layer (c). Using standard photolithography to lithograph the mask (d), then etched the mask (SiO2) (e,g) and Si substrate (f ). Finally, Si substrate etched (mPSiS) with SiO2 has been removed (inset shows cross-sectional image) (h).

Mentions: The SiO2 (250 nm thick) mask layer was deposited on the 2 in. Si(111) substrates by using plasma-enhanced chemical vapor deposition system (SAMCO CVD PD-220 N). Substrates were subjected to standard lithography, and inductively coupled plasma (SAMCO ICP RIE-200iP) was used to etch the SiO2/Si substrates layer by layer. For SiO2 etching, CF4 was supplied at 20 sccm for 2.5 min. Si was etched with CF4:O2 (10:1) for 50 min at 100 Torr and a 10 W bias. The SiO2 mask used for patterning and the photoresist were completely removed by using acetone and wet chemical etching (buffered hydrofluoric acid) before AlN overgrowth. The fabrication of the substrate and the final mPSiS are shown in Fig. 1(a–h). The micro-circle pattern had diameters of about 1.5 μm, a depth of 1 μm, and a period of 3.5 μm.


Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.

Tran BT, Hirayama H, Maeda N, Jo M, Toyoda S, Kamata N - Sci Rep (2015)

Steps for fabricating a mPSiS by using standard photolithography and ICP etching techniques (a–f).Si substrate after treated with a BOE (a), deposited SiO2 by PECVD (b) and coated a photoresist layer (c). Using standard photolithography to lithograph the mask (d), then etched the mask (SiO2) (e,g) and Si substrate (f ). Finally, Si substrate etched (mPSiS) with SiO2 has been removed (inset shows cross-sectional image) (h).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4593966&req=5

f1: Steps for fabricating a mPSiS by using standard photolithography and ICP etching techniques (a–f).Si substrate after treated with a BOE (a), deposited SiO2 by PECVD (b) and coated a photoresist layer (c). Using standard photolithography to lithograph the mask (d), then etched the mask (SiO2) (e,g) and Si substrate (f ). Finally, Si substrate etched (mPSiS) with SiO2 has been removed (inset shows cross-sectional image) (h).
Mentions: The SiO2 (250 nm thick) mask layer was deposited on the 2 in. Si(111) substrates by using plasma-enhanced chemical vapor deposition system (SAMCO CVD PD-220 N). Substrates were subjected to standard lithography, and inductively coupled plasma (SAMCO ICP RIE-200iP) was used to etch the SiO2/Si substrates layer by layer. For SiO2 etching, CF4 was supplied at 20 sccm for 2.5 min. Si was etched with CF4:O2 (10:1) for 50 min at 100 Torr and a 10 W bias. The SiO2 mask used for patterning and the photoresist were completely removed by using acetone and wet chemical etching (buffered hydrofluoric acid) before AlN overgrowth. The fabrication of the substrate and the final mPSiS are shown in Fig. 1(a–h). The micro-circle pattern had diameters of about 1.5 μm, a depth of 1 μm, and a period of 3.5 μm.

Bottom Line: High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates.The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves.

View Article: PubMed Central - PubMed

Affiliation: Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 × 10(8) cm(-2) (screw), 3.7 × 10(8) (edge) cm(-2)).

No MeSH data available.


Related in: MedlinePlus