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Facile Carbon Fixation to Performic Acids by Water-Sealed Dielectric Barrier Discharge.

Kawasaki M, Morita T, Tachibana K - Sci Rep (2015)

Bottom Line: The creation of artificial carbon fixation processes is one of the greatest challenges for chemistry to solve the critical environmental issue concerning the reduction of CO2 emissions.We have developed an electricity-driven facile CO2 fixation process that yields performic acid, HCO2OH, from CO2 and water at neutral pH by dielectric barrier discharge with an input electric power conversion efficiency of currently 0.2-0.4%.This method offers a promising future technology for artificial carbon fixation on its own, and may also be scaled up in combination with e.g., the post-combustion CO2 capture and storage technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Molecular Engineering, Kyoto University, Katsura, Kyoto 615-8510, Japan.

ABSTRACT
Carbon fixation refers to the conversion of carbon dioxide (CO2) to organic materials, as commonly performed in nature through photosynthesis by plants and other autotrophic organisms. The creation of artificial carbon fixation processes is one of the greatest challenges for chemistry to solve the critical environmental issue concerning the reduction of CO2 emissions. We have developed an electricity-driven facile CO2 fixation process that yields performic acid, HCO2OH, from CO2 and water at neutral pH by dielectric barrier discharge with an input electric power conversion efficiency of currently 0.2-0.4%. This method offers a promising future technology for artificial carbon fixation on its own, and may also be scaled up in combination with e.g., the post-combustion CO2 capture and storage technology.

No MeSH data available.


Related in: MedlinePlus

Oxidation of Si wafer surface by the WS-DBD product.(a) Si 2p core-level XPS spectrum taken for a bare Si water, showing a minor SiOx signal due to the native oxide as compared to Si signal from the bulk. (b) The solid deposit from the WS-DBD product solution on the Si wafer strongly attenuated the underlying SiOx and Si signals. A largely increased SiOx/Si intensity ratio indicates a substantial increase of the surface oxide thickness of the Si wafer.
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f3: Oxidation of Si wafer surface by the WS-DBD product.(a) Si 2p core-level XPS spectrum taken for a bare Si water, showing a minor SiOx signal due to the native oxide as compared to Si signal from the bulk. (b) The solid deposit from the WS-DBD product solution on the Si wafer strongly attenuated the underlying SiOx and Si signals. A largely increased SiOx/Si intensity ratio indicates a substantial increase of the surface oxide thickness of the Si wafer.

Mentions: Importantly, the relatively strong vibrational manifolds below 1000 cm−1 in Fig. 2f largely come from silicon oxides, representing substantial oxidation of the Si wafer by PFA. The oxidative change in the sub-surface chemical composition of Si wafer was also verified by X-ray photoelectron spectroscopy (XPS) analysis; see Fig. 3. XPS offers a sensitive tool to study the surface and/or sub-surface chemical composition of arbitrary solids37. In the case of Si substrate, the extent of surface oxidation is reflected upon the SiOx/Si intensity ratio in the Si 2p core-level spectra. Commercially available Si wafers, unless otherwise pre-etched chemically or by ion bombardment, possess a thin layer of native oxide, which gives rise to a relatively minor SiOx signal as compared to the Si signal from the substrate bulk, as shown in Fig. 3a.


Facile Carbon Fixation to Performic Acids by Water-Sealed Dielectric Barrier Discharge.

Kawasaki M, Morita T, Tachibana K - Sci Rep (2015)

Oxidation of Si wafer surface by the WS-DBD product.(a) Si 2p core-level XPS spectrum taken for a bare Si water, showing a minor SiOx signal due to the native oxide as compared to Si signal from the bulk. (b) The solid deposit from the WS-DBD product solution on the Si wafer strongly attenuated the underlying SiOx and Si signals. A largely increased SiOx/Si intensity ratio indicates a substantial increase of the surface oxide thickness of the Si wafer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4593949&req=5

f3: Oxidation of Si wafer surface by the WS-DBD product.(a) Si 2p core-level XPS spectrum taken for a bare Si water, showing a minor SiOx signal due to the native oxide as compared to Si signal from the bulk. (b) The solid deposit from the WS-DBD product solution on the Si wafer strongly attenuated the underlying SiOx and Si signals. A largely increased SiOx/Si intensity ratio indicates a substantial increase of the surface oxide thickness of the Si wafer.
Mentions: Importantly, the relatively strong vibrational manifolds below 1000 cm−1 in Fig. 2f largely come from silicon oxides, representing substantial oxidation of the Si wafer by PFA. The oxidative change in the sub-surface chemical composition of Si wafer was also verified by X-ray photoelectron spectroscopy (XPS) analysis; see Fig. 3. XPS offers a sensitive tool to study the surface and/or sub-surface chemical composition of arbitrary solids37. In the case of Si substrate, the extent of surface oxidation is reflected upon the SiOx/Si intensity ratio in the Si 2p core-level spectra. Commercially available Si wafers, unless otherwise pre-etched chemically or by ion bombardment, possess a thin layer of native oxide, which gives rise to a relatively minor SiOx signal as compared to the Si signal from the substrate bulk, as shown in Fig. 3a.

Bottom Line: The creation of artificial carbon fixation processes is one of the greatest challenges for chemistry to solve the critical environmental issue concerning the reduction of CO2 emissions.We have developed an electricity-driven facile CO2 fixation process that yields performic acid, HCO2OH, from CO2 and water at neutral pH by dielectric barrier discharge with an input electric power conversion efficiency of currently 0.2-0.4%.This method offers a promising future technology for artificial carbon fixation on its own, and may also be scaled up in combination with e.g., the post-combustion CO2 capture and storage technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Molecular Engineering, Kyoto University, Katsura, Kyoto 615-8510, Japan.

ABSTRACT
Carbon fixation refers to the conversion of carbon dioxide (CO2) to organic materials, as commonly performed in nature through photosynthesis by plants and other autotrophic organisms. The creation of artificial carbon fixation processes is one of the greatest challenges for chemistry to solve the critical environmental issue concerning the reduction of CO2 emissions. We have developed an electricity-driven facile CO2 fixation process that yields performic acid, HCO2OH, from CO2 and water at neutral pH by dielectric barrier discharge with an input electric power conversion efficiency of currently 0.2-0.4%. This method offers a promising future technology for artificial carbon fixation on its own, and may also be scaled up in combination with e.g., the post-combustion CO2 capture and storage technology.

No MeSH data available.


Related in: MedlinePlus