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Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents.

Sharma S, Muralidharan B, Tulapurkar A - Sci Rep (2015)

Bottom Line: We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000.A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples.Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India.

ABSTRACT
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.

No MeSH data available.


Current push and Field push.(a) Simulation results for domain wall position, Z when started from a point inside the region of non-zero spin current. (b) Similar plot as (a) except for the initial position of domain wall being inside the region of zero spin current.
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f3: Current push and Field push.(a) Simulation results for domain wall position, Z when started from a point inside the region of non-zero spin current. (b) Similar plot as (a) except for the initial position of domain wall being inside the region of zero spin current.

Mentions: In Fig. 3(a), we demonstrate the simulated motion of a rigid domain wall starting from a point z < 0. As shown in the figure, the domain wall will be pushed away until the “force” of the spin current is small enough to be compensated by the drift caused by the magnetic field. An opposite scenario is shown in Fig. 3(b), where the domain wall starting deep inside the region of zero spin current (z > 0) will have a field driven drift until it encounters the region of non-zero spin current. In both the scenarios, the spin current magnitude should be large enough to push back the domain wall or the latter will continue to move indefinitely against the field.


Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents.

Sharma S, Muralidharan B, Tulapurkar A - Sci Rep (2015)

Current push and Field push.(a) Simulation results for domain wall position, Z when started from a point inside the region of non-zero spin current. (b) Similar plot as (a) except for the initial position of domain wall being inside the region of zero spin current.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4588506&req=5

f3: Current push and Field push.(a) Simulation results for domain wall position, Z when started from a point inside the region of non-zero spin current. (b) Similar plot as (a) except for the initial position of domain wall being inside the region of zero spin current.
Mentions: In Fig. 3(a), we demonstrate the simulated motion of a rigid domain wall starting from a point z < 0. As shown in the figure, the domain wall will be pushed away until the “force” of the spin current is small enough to be compensated by the drift caused by the magnetic field. An opposite scenario is shown in Fig. 3(b), where the domain wall starting deep inside the region of zero spin current (z > 0) will have a field driven drift until it encounters the region of non-zero spin current. In both the scenarios, the spin current magnitude should be large enough to push back the domain wall or the latter will continue to move indefinitely against the field.

Bottom Line: We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000.A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples.Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India.

ABSTRACT
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.

No MeSH data available.