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Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.

Moraru D, Samanta A, Tyszka K, Anh le T, Muruganathan M, Mizuno T, Jablonski R, Mizuta H, Tabe M - Nanoscale Res Lett (2015)

Bottom Line: One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics.We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths.This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics and Materials Science, Faculty of Engineering, Shizuoka University, Shizuoka, Japan. moraru.daniel@shizuoka.ac.jp.

ABSTRACT
Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.

No MeSH data available.


Related in: MedlinePlus

Nanoscale-channel transistors with various channel designs. a SOI-FETs with a top gate and bias circuit for ID-VG measurements. Different devices have been fabricated, with different doping concentrations and profiles across the channel: b low concentration (ND ≈ 1 × 1018 cm−3)—single-electron tunneling occurs via individual P-donors (nanowire and stub-shaped channels are illustrated); c high concentration (ND ≈ 1 × 1019 cm−3)—single-electron tunneling occurs via “clusters” of P-donors
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Fig4: Nanoscale-channel transistors with various channel designs. a SOI-FETs with a top gate and bias circuit for ID-VG measurements. Different devices have been fabricated, with different doping concentrations and profiles across the channel: b low concentration (ND ≈ 1 × 1018 cm−3)—single-electron tunneling occurs via individual P-donors (nanowire and stub-shaped channels are illustrated); c high concentration (ND ≈ 1 × 1019 cm−3)—single-electron tunneling occurs via “clusters” of P-donors

Mentions: In order to reveal the electrical properties of various systems of dopants, either isolated or “clustered,” it is common to measure source-drain current (ID) versus gate voltage (VG) characteristics, in particular at low temperatures (< <100 K) for doped-channel nanoscale SOI-FETs, with a bias setup as shown in Fig. 4a. At low temperature, as discussed earlier, thermal activation of carriers can be minimized and conductance occurs dominantly by tunneling via dopant-states.Fig. 4


Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.

Moraru D, Samanta A, Tyszka K, Anh le T, Muruganathan M, Mizuno T, Jablonski R, Mizuta H, Tabe M - Nanoscale Res Lett (2015)

Nanoscale-channel transistors with various channel designs. a SOI-FETs with a top gate and bias circuit for ID-VG measurements. Different devices have been fabricated, with different doping concentrations and profiles across the channel: b low concentration (ND ≈ 1 × 1018 cm−3)—single-electron tunneling occurs via individual P-donors (nanowire and stub-shaped channels are illustrated); c high concentration (ND ≈ 1 × 1019 cm−3)—single-electron tunneling occurs via “clusters” of P-donors
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4582038&req=5

Fig4: Nanoscale-channel transistors with various channel designs. a SOI-FETs with a top gate and bias circuit for ID-VG measurements. Different devices have been fabricated, with different doping concentrations and profiles across the channel: b low concentration (ND ≈ 1 × 1018 cm−3)—single-electron tunneling occurs via individual P-donors (nanowire and stub-shaped channels are illustrated); c high concentration (ND ≈ 1 × 1019 cm−3)—single-electron tunneling occurs via “clusters” of P-donors
Mentions: In order to reveal the electrical properties of various systems of dopants, either isolated or “clustered,” it is common to measure source-drain current (ID) versus gate voltage (VG) characteristics, in particular at low temperatures (< <100 K) for doped-channel nanoscale SOI-FETs, with a bias setup as shown in Fig. 4a. At low temperature, as discussed earlier, thermal activation of carriers can be minimized and conductance occurs dominantly by tunneling via dopant-states.Fig. 4

Bottom Line: One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics.We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths.This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics and Materials Science, Faculty of Engineering, Shizuoka University, Shizuoka, Japan. moraru.daniel@shizuoka.ac.jp.

ABSTRACT
Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.

No MeSH data available.


Related in: MedlinePlus