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Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.

Bai Y, Wu H, Wang K, Wu R, Song L, Li T, Wang J, Yu Z, Qian H - Sci Rep (2015)

Bottom Line: The electrical results reveal that the RRAM devices could switch normally with this very thin edge electrode at nanometer scale.Meanwhile, benefited from the asymmetric carrier transport induced by Schottky barrier at metal/CNT and oxide/CNT interfaces, a selector built-in 3D RRAM structure using CNT as edge electrode is successfully fabricated and characterized.Furthermore, the discussion of high array density potential is presented.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Tsinghua University, Beijing, China, 100084.

ABSTRACT
There are two critical challenges which determine the array density of 3D RRAM: 1) the scaling limit in both horizontal and vertical directions; 2) the integration of selector devices in 3D structure. In this work, we present a novel 3D RRAM structure using low-dimensional materials, including 2D graphene and 1D carbon nanotube (CNT), as the edge electrodes. A two-layer 3D RRAM with monolayer graphene as edge electrode is demonstrated. The electrical results reveal that the RRAM devices could switch normally with this very thin edge electrode at nanometer scale. Meanwhile, benefited from the asymmetric carrier transport induced by Schottky barrier at metal/CNT and oxide/CNT interfaces, a selector built-in 3D RRAM structure using CNT as edge electrode is successfully fabricated and characterized. Furthermore, the discussion of high array density potential is presented.

No MeSH data available.


Electrical performance of 3D Ta2O5-x/TaOy RRAM with metallic CNT edge electrode:(a) the Semi-log I-V curves of CNT between TaOy and Sc electrode; (b) the typical bipolar resistive switching; (c) the retention measurement at 85 °C with 1 V read voltage. And electrical performance of device with semiconducting CNT BE: (a) the Semi-log I-V curves of CNT between TaOy and Sc electrode, with the band-gap structure shown in the inset image; (b) the typical bipolar resistive switching with a rectification ratio more than 103; (c) the retention measurement at 85 °C with 5 V read voltage.
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f6: Electrical performance of 3D Ta2O5-x/TaOy RRAM with metallic CNT edge electrode:(a) the Semi-log I-V curves of CNT between TaOy and Sc electrode; (b) the typical bipolar resistive switching; (c) the retention measurement at 85 °C with 1 V read voltage. And electrical performance of device with semiconducting CNT BE: (a) the Semi-log I-V curves of CNT between TaOy and Sc electrode, with the band-gap structure shown in the inset image; (b) the typical bipolar resistive switching with a rectification ratio more than 103; (c) the retention measurement at 85 °C with 5 V read voltage.

Mentions: Figure 6 shows the electrical performance of the 3D Ta2O5-x/TaOy RRAM with CNT edge electrode. Both metallic and semiconducting CNTs were investigated. The metallic CNT with TaOy and Sc electrodes shows a near-ohmic behaviour as shown in Fig. 6(a). Following the transport property of CNT, the fabricated 3D RRAM device using metallic CNT as edge electrode has symmetrical I-V curve, as shown in Fig. 6(b). It confirms that 3D RRAM with metallic CNT edge electrode could switch successfully similar to the cell with graphene edge electrode. The cell retention measurement result shows that both HRS and LRS could be kept stable at 100 MΩ and 10 MΩ for more than 104 s at 85 °C, as shown in Fig. 6(c).


Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.

Bai Y, Wu H, Wang K, Wu R, Song L, Li T, Wang J, Yu Z, Qian H - Sci Rep (2015)

Electrical performance of 3D Ta2O5-x/TaOy RRAM with metallic CNT edge electrode:(a) the Semi-log I-V curves of CNT between TaOy and Sc electrode; (b) the typical bipolar resistive switching; (c) the retention measurement at 85 °C with 1 V read voltage. And electrical performance of device with semiconducting CNT BE: (a) the Semi-log I-V curves of CNT between TaOy and Sc electrode, with the band-gap structure shown in the inset image; (b) the typical bipolar resistive switching with a rectification ratio more than 103; (c) the retention measurement at 85 °C with 5 V read voltage.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4562297&req=5

f6: Electrical performance of 3D Ta2O5-x/TaOy RRAM with metallic CNT edge electrode:(a) the Semi-log I-V curves of CNT between TaOy and Sc electrode; (b) the typical bipolar resistive switching; (c) the retention measurement at 85 °C with 1 V read voltage. And electrical performance of device with semiconducting CNT BE: (a) the Semi-log I-V curves of CNT between TaOy and Sc electrode, with the band-gap structure shown in the inset image; (b) the typical bipolar resistive switching with a rectification ratio more than 103; (c) the retention measurement at 85 °C with 5 V read voltage.
Mentions: Figure 6 shows the electrical performance of the 3D Ta2O5-x/TaOy RRAM with CNT edge electrode. Both metallic and semiconducting CNTs were investigated. The metallic CNT with TaOy and Sc electrodes shows a near-ohmic behaviour as shown in Fig. 6(a). Following the transport property of CNT, the fabricated 3D RRAM device using metallic CNT as edge electrode has symmetrical I-V curve, as shown in Fig. 6(b). It confirms that 3D RRAM with metallic CNT edge electrode could switch successfully similar to the cell with graphene edge electrode. The cell retention measurement result shows that both HRS and LRS could be kept stable at 100 MΩ and 10 MΩ for more than 104 s at 85 °C, as shown in Fig. 6(c).

Bottom Line: The electrical results reveal that the RRAM devices could switch normally with this very thin edge electrode at nanometer scale.Meanwhile, benefited from the asymmetric carrier transport induced by Schottky barrier at metal/CNT and oxide/CNT interfaces, a selector built-in 3D RRAM structure using CNT as edge electrode is successfully fabricated and characterized.Furthermore, the discussion of high array density potential is presented.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Tsinghua University, Beijing, China, 100084.

ABSTRACT
There are two critical challenges which determine the array density of 3D RRAM: 1) the scaling limit in both horizontal and vertical directions; 2) the integration of selector devices in 3D structure. In this work, we present a novel 3D RRAM structure using low-dimensional materials, including 2D graphene and 1D carbon nanotube (CNT), as the edge electrodes. A two-layer 3D RRAM with monolayer graphene as edge electrode is demonstrated. The electrical results reveal that the RRAM devices could switch normally with this very thin edge electrode at nanometer scale. Meanwhile, benefited from the asymmetric carrier transport induced by Schottky barrier at metal/CNT and oxide/CNT interfaces, a selector built-in 3D RRAM structure using CNT as edge electrode is successfully fabricated and characterized. Furthermore, the discussion of high array density potential is presented.

No MeSH data available.