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A double barrier memristive device.

Hansen M, Ziegler M, Kolberg L, Soni R, Dirkmann S, Mussenbrock T, Kohlstedt H - Sci Rep (2015)

Bottom Line: A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism.In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively.The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits.

View Article: PubMed Central - PubMed

Affiliation: Nanoelektronik, Technische Fakultät Kiel, Christian-Albrechts-Universität Kiel, Kiel 24143, Germany.

ABSTRACT
We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits.

No MeSH data available.


Related in: MedlinePlus

Schematic of the electronic band structure variations.(a) I–V characteristics of the LRS and HRS branch of the double barrier device in the reverse voltage regime of the Schottky contact (device area is normalized to 1 μm2). Solid lines are data fits according to Equation 1 to extract the Schottky barrier height ϕB. (b) Comparison between the Schottky contact resistance at the LRS and HRS branch and the tunnelling resistance. Inset: Shift of the diode forward current onset. (c) Schematic electronic band diagram of the double barrier structure for the LRS (red line) and HRS (blue line). During the transition from the HRS to LRS, moving oxygen ions cause an decrease of the interfacial potential VI by a down shift of the interfacial band in NbxOy (dashed line). Further, the effective barrier tunnel width deff and the apparent barrier heights ϕAl, and ϕAu of ,respectively, the Al electrode, and Au contact are decreased.
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f4: Schematic of the electronic band structure variations.(a) I–V characteristics of the LRS and HRS branch of the double barrier device in the reverse voltage regime of the Schottky contact (device area is normalized to 1 μm2). Solid lines are data fits according to Equation 1 to extract the Schottky barrier height ϕB. (b) Comparison between the Schottky contact resistance at the LRS and HRS branch and the tunnelling resistance. Inset: Shift of the diode forward current onset. (c) Schematic electronic band diagram of the double barrier structure for the LRS (red line) and HRS (blue line). During the transition from the HRS to LRS, moving oxygen ions cause an decrease of the interfacial potential VI by a down shift of the interfacial band in NbxOy (dashed line). Further, the effective barrier tunnel width deff and the apparent barrier heights ϕAl, and ϕAu of ,respectively, the Al electrode, and Au contact are decreased.

Mentions: In order to study the influence of the Schottky interface, the thermionic emission theory was employed to get information from I–V data (cf. Fig. 4(b)). In this theory, a Schottky contact is described by a set of analytical expressions, where the Schottky diode current for forward bias voltages is defined as3233


A double barrier memristive device.

Hansen M, Ziegler M, Kolberg L, Soni R, Dirkmann S, Mussenbrock T, Kohlstedt H - Sci Rep (2015)

Schematic of the electronic band structure variations.(a) I–V characteristics of the LRS and HRS branch of the double barrier device in the reverse voltage regime of the Schottky contact (device area is normalized to 1 μm2). Solid lines are data fits according to Equation 1 to extract the Schottky barrier height ϕB. (b) Comparison between the Schottky contact resistance at the LRS and HRS branch and the tunnelling resistance. Inset: Shift of the diode forward current onset. (c) Schematic electronic band diagram of the double barrier structure for the LRS (red line) and HRS (blue line). During the transition from the HRS to LRS, moving oxygen ions cause an decrease of the interfacial potential VI by a down shift of the interfacial band in NbxOy (dashed line). Further, the effective barrier tunnel width deff and the apparent barrier heights ϕAl, and ϕAu of ,respectively, the Al electrode, and Au contact are decreased.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4562229&req=5

f4: Schematic of the electronic band structure variations.(a) I–V characteristics of the LRS and HRS branch of the double barrier device in the reverse voltage regime of the Schottky contact (device area is normalized to 1 μm2). Solid lines are data fits according to Equation 1 to extract the Schottky barrier height ϕB. (b) Comparison between the Schottky contact resistance at the LRS and HRS branch and the tunnelling resistance. Inset: Shift of the diode forward current onset. (c) Schematic electronic band diagram of the double barrier structure for the LRS (red line) and HRS (blue line). During the transition from the HRS to LRS, moving oxygen ions cause an decrease of the interfacial potential VI by a down shift of the interfacial band in NbxOy (dashed line). Further, the effective barrier tunnel width deff and the apparent barrier heights ϕAl, and ϕAu of ,respectively, the Al electrode, and Au contact are decreased.
Mentions: In order to study the influence of the Schottky interface, the thermionic emission theory was employed to get information from I–V data (cf. Fig. 4(b)). In this theory, a Schottky contact is described by a set of analytical expressions, where the Schottky diode current for forward bias voltages is defined as3233

Bottom Line: A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism.In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively.The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits.

View Article: PubMed Central - PubMed

Affiliation: Nanoelektronik, Technische Fakultät Kiel, Christian-Albrechts-Universität Kiel, Kiel 24143, Germany.

ABSTRACT
We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits.

No MeSH data available.


Related in: MedlinePlus