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Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers.

Peng KJ, Lin YH, Wu CL, Lin SF, Yang CY, Lin SM, Tsai DP, Lin GR - Sci Rep (2015)

Bottom Line: In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm.The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one.Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

View Article: PubMed Central - PubMed

Affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU), No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.

ABSTRACT
The in-situ dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

No MeSH data available.


The schematic diagram of reflection-type passively mode locked EDFL.The passively mode-locked EDFL system with the reflection-type graphene saturable absorber attached on the gold film.
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f6: The schematic diagram of reflection-type passively mode locked EDFL.The passively mode-locked EDFL system with the reflection-type graphene saturable absorber attached on the gold film.

Mentions: In contrast, the second system with a reflection-type few-layer graphene saturable absorber in the passively mode-locked EDFL system is demonstrated as shown in Fig. 6. The other parameters are kept unchanged for the comparison with the transmission-type one. To form the reflection-type saturable absorber, the connector end-face of a SMF patchcord was pre-coated with 300-nm thick gold via the thermal E-gun. After the gold evaporation, the hydrogen-free and low-temperature PECVD synthesized few-layer graphene was transferred onto the surface of gold coated connector end-face and connected to the circulator (port 2). The other ports (1 and 3) of circulator were connected to the system.


Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers.

Peng KJ, Lin YH, Wu CL, Lin SF, Yang CY, Lin SM, Tsai DP, Lin GR - Sci Rep (2015)

The schematic diagram of reflection-type passively mode locked EDFL.The passively mode-locked EDFL system with the reflection-type graphene saturable absorber attached on the gold film.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4556966&req=5

f6: The schematic diagram of reflection-type passively mode locked EDFL.The passively mode-locked EDFL system with the reflection-type graphene saturable absorber attached on the gold film.
Mentions: In contrast, the second system with a reflection-type few-layer graphene saturable absorber in the passively mode-locked EDFL system is demonstrated as shown in Fig. 6. The other parameters are kept unchanged for the comparison with the transmission-type one. To form the reflection-type saturable absorber, the connector end-face of a SMF patchcord was pre-coated with 300-nm thick gold via the thermal E-gun. After the gold evaporation, the hydrogen-free and low-temperature PECVD synthesized few-layer graphene was transferred onto the surface of gold coated connector end-face and connected to the circulator (port 2). The other ports (1 and 3) of circulator were connected to the system.

Bottom Line: In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm.The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one.Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

View Article: PubMed Central - PubMed

Affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU), No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.

ABSTRACT
The in-situ dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

No MeSH data available.