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Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers.

Peng KJ, Lin YH, Wu CL, Lin SF, Yang CY, Lin SM, Tsai DP, Lin GR - Sci Rep (2015)

Bottom Line: In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm.The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one.Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

View Article: PubMed Central - PubMed

Affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU), No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.

ABSTRACT
The in-situ dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

No MeSH data available.


Related in: MedlinePlus

Graphene precipitation from Ni substrate and graphene adhesion on the SMF patchcord.(a) The process of graphene precipitation from Ni substrate. (b) The transfer process of graphene from Ni substrate to the SMF patchcord.
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f4: Graphene precipitation from Ni substrate and graphene adhesion on the SMF patchcord.(a) The process of graphene precipitation from Ni substrate. (b) The transfer process of graphene from Ni substrate to the SMF patchcord.

Mentions: In experiment, the few-layer graphene at 550 °C is performed with the mixed methane and argon at gas flow rate of 3 and 200 SCCM, respectively. The deposition on 50 nm of Ni substrate by PECVD with the plasma power of 100 W sustains for 100 s. At initial stage, the carbon atoms are gradually dissolved into Ni film at substrate temperature beyond threshold, where the formation of hexagonal carbon ring structure cannot be initiated in the interstices of Ni film. By lowering the substrate temperature, numerous carbon atoms desorb from Ni matrix to form the hexagonal carbon ring structure, and the layer number of graphene on the Ni film is dominated by the amount of desorbed carbon atoms22. Figure 4(a) schematically illustrates the formation of few-layer graphene on Ni film. The advantages of such PECVD synthesis are listed below.


Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers.

Peng KJ, Lin YH, Wu CL, Lin SF, Yang CY, Lin SM, Tsai DP, Lin GR - Sci Rep (2015)

Graphene precipitation from Ni substrate and graphene adhesion on the SMF patchcord.(a) The process of graphene precipitation from Ni substrate. (b) The transfer process of graphene from Ni substrate to the SMF patchcord.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4556966&req=5

f4: Graphene precipitation from Ni substrate and graphene adhesion on the SMF patchcord.(a) The process of graphene precipitation from Ni substrate. (b) The transfer process of graphene from Ni substrate to the SMF patchcord.
Mentions: In experiment, the few-layer graphene at 550 °C is performed with the mixed methane and argon at gas flow rate of 3 and 200 SCCM, respectively. The deposition on 50 nm of Ni substrate by PECVD with the plasma power of 100 W sustains for 100 s. At initial stage, the carbon atoms are gradually dissolved into Ni film at substrate temperature beyond threshold, where the formation of hexagonal carbon ring structure cannot be initiated in the interstices of Ni film. By lowering the substrate temperature, numerous carbon atoms desorb from Ni matrix to form the hexagonal carbon ring structure, and the layer number of graphene on the Ni film is dominated by the amount of desorbed carbon atoms22. Figure 4(a) schematically illustrates the formation of few-layer graphene on Ni film. The advantages of such PECVD synthesis are listed below.

Bottom Line: In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm.The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one.Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

View Article: PubMed Central - PubMed

Affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU), No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.

ABSTRACT
The in-situ dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design.

No MeSH data available.


Related in: MedlinePlus