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Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.


The emission polarization of the lasing obtained from the Au/MgO/ZnO structure via the electrostatic doping method.
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f7: The emission polarization of the lasing obtained from the Au/MgO/ZnO structure via the electrostatic doping method.

Mentions: Figure 6a shows the far-field emission image observed from the edge of the Au/MgO/ZnO structure. A bright elliptical-shaped spot can be detected from the ZnO layer. The electromagnetic field distribution of the emitted light in the Au/MgO/ZnO structure has been analyzed by finite-different time domain (FDTD) method, as shown in Fig. 6b. One can see that most of the emission energy is confined in the ZnO layer, which agrees well with the far field emission image shown in Fig. 6a. The polarization of the lasing has been studied by measuring the transverse electric (TE) and transverse magnetic (TM) emission spectra of the structure, as shown in Fig. 7. One can see from the figure that a strong polarization of the lasing emission can be observed, and the emission is believed to be E// <0001> polarized from the dominant TM optical gain in the Au/MgO/ZnO structure.


Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

The emission polarization of the lasing obtained from the Au/MgO/ZnO structure via the electrostatic doping method.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4555170&req=5

f7: The emission polarization of the lasing obtained from the Au/MgO/ZnO structure via the electrostatic doping method.
Mentions: Figure 6a shows the far-field emission image observed from the edge of the Au/MgO/ZnO structure. A bright elliptical-shaped spot can be detected from the ZnO layer. The electromagnetic field distribution of the emitted light in the Au/MgO/ZnO structure has been analyzed by finite-different time domain (FDTD) method, as shown in Fig. 6b. One can see that most of the emission energy is confined in the ZnO layer, which agrees well with the far field emission image shown in Fig. 6a. The polarization of the lasing has been studied by measuring the transverse electric (TE) and transverse magnetic (TM) emission spectra of the structure, as shown in Fig. 7. One can see from the figure that a strong polarization of the lasing emission can be observed, and the emission is believed to be E// <0001> polarized from the dominant TM optical gain in the Au/MgO/ZnO structure.

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.