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Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus

EL spectra measured from the edge of the Au/MgO/ZnO structure.In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The emission spectrum of the device when /VGS/ is set as zero and /IDS/ as 2.5 mA is also illustrated in the figure, and the inset shows the dependence of the integrated emission intensity recorded from the side of the device on /IDS/.
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f5: EL spectra measured from the edge of the Au/MgO/ZnO structure.In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The emission spectrum of the device when /VGS/ is set as zero and /IDS/ as 2.5 mA is also illustrated in the figure, and the inset shows the dependence of the integrated emission intensity recorded from the side of the device on /IDS/.

Mentions: The optically pumped lasing observed in the ZnO films suggests that the films can be employed as an arena for testing the electrically lasing via the electrostatic doping method. To this end, by fixing the gate bias at −50 V, the voltage between the source and drain electrodes have been varied, the emission is recorded from the edge of the structure, the results of which are shown in Fig. 5. When /IDS/ is 0.1 mA, there appears a broad emission band with peak wavelength located at ~395 nm and the corresponding FWHM is ~28 nm. This emission is very similar in shape and position with the emission detected from the top surface of the devices shown in Fig. 3a. With increasing /IDS/ to 0.8 mA, a few sharp peaks emerge from the broad emission spectrum. By further increasing /IDS/ to 2.5 mA, more sharp peaks appear. The dependence of the integrated emission intensity on /IDS/ is shown in the inset of Fig. 5. It is noted that when /IDS/ is less than 0.5 mA, the emission intensity increases linearly with /IDS/, while the emission intensity increases abruptly when /IDS/ is larger than 0.5 mA. The emission intensity can be increased by more than 32 times, and the width of the emission reduced by a factor of over 20 for /IDS/ increases from 0.1 to 2.5 mA. The observation of kink point in the light-current curve and the reduction in the FWHM of the emission spectra suggested that lasing emission has been realized in the Au/MgO/ZnO structures2829. We note that if /VGS/ is set as zero, electrostatic doping process will not occur under such case, no emission can be detected from the structure, as indicated in Fig. 5, which confirm that the lasing is resulted from the holes realized via the electrostatic doping process. To the best of our knowledge, none report on lasers realized via electrostatic doping route can be found before. Notably, the threshold of 0.5 mA is the smallest value ever reported for UV lasers24. The electrically pumped lasing phenomenon realized in the Au/MgO/ZnO structure reveals the effectiveness of the electrostatic doping method.


Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

EL spectra measured from the edge of the Au/MgO/ZnO structure.In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The emission spectrum of the device when /VGS/ is set as zero and /IDS/ as 2.5 mA is also illustrated in the figure, and the inset shows the dependence of the integrated emission intensity recorded from the side of the device on /IDS/.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4555170&req=5

f5: EL spectra measured from the edge of the Au/MgO/ZnO structure.In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The emission spectrum of the device when /VGS/ is set as zero and /IDS/ as 2.5 mA is also illustrated in the figure, and the inset shows the dependence of the integrated emission intensity recorded from the side of the device on /IDS/.
Mentions: The optically pumped lasing observed in the ZnO films suggests that the films can be employed as an arena for testing the electrically lasing via the electrostatic doping method. To this end, by fixing the gate bias at −50 V, the voltage between the source and drain electrodes have been varied, the emission is recorded from the edge of the structure, the results of which are shown in Fig. 5. When /IDS/ is 0.1 mA, there appears a broad emission band with peak wavelength located at ~395 nm and the corresponding FWHM is ~28 nm. This emission is very similar in shape and position with the emission detected from the top surface of the devices shown in Fig. 3a. With increasing /IDS/ to 0.8 mA, a few sharp peaks emerge from the broad emission spectrum. By further increasing /IDS/ to 2.5 mA, more sharp peaks appear. The dependence of the integrated emission intensity on /IDS/ is shown in the inset of Fig. 5. It is noted that when /IDS/ is less than 0.5 mA, the emission intensity increases linearly with /IDS/, while the emission intensity increases abruptly when /IDS/ is larger than 0.5 mA. The emission intensity can be increased by more than 32 times, and the width of the emission reduced by a factor of over 20 for /IDS/ increases from 0.1 to 2.5 mA. The observation of kink point in the light-current curve and the reduction in the FWHM of the emission spectra suggested that lasing emission has been realized in the Au/MgO/ZnO structures2829. We note that if /VGS/ is set as zero, electrostatic doping process will not occur under such case, no emission can be detected from the structure, as indicated in Fig. 5, which confirm that the lasing is resulted from the holes realized via the electrostatic doping process. To the best of our knowledge, none report on lasers realized via electrostatic doping route can be found before. Notably, the threshold of 0.5 mA is the smallest value ever reported for UV lasers24. The electrically pumped lasing phenomenon realized in the Au/MgO/ZnO structure reveals the effectiveness of the electrostatic doping method.

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus