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Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.


PL spectra of the ZnO film excited by a 266 nm laser.
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f4: PL spectra of the ZnO film excited by a 266 nm laser.

Mentions: It is accepted that due to the relatively large exciton binding energy of ZnO (60 meV), lasing can be realized via an exciton-exciton scattering mode, and the threshold of which can be over two orders of magnitude smaller than that realized via an electron-hole pair mode20. Therefore, it is expected that low-threshold lasing may be realized in ZnO. Actually, many lasing emissions have been observed in ZnO films, nanostructures and powders21222324252627, To show the feasibility of the electrostatic doping in ZnO based lasers, optically pumped lasing has been measured on the ZnO layer employed as active layer of the electrostatic doping, and the spectra are shown in Fig. 4. When the pumping power is 0.15 mW, although the emission of the ZnO layer is weak, a broad band at around 380 nm can also be observed, which corresponds to the NBE emission of ZnO, and the full-width at half maximum (FWHM) of the emission is about 10.5 nm. When the excitation power is increased to 0.50 mW, some sharp peaks superimposed on the low-energy side of the broad band, are visible in the spectrum, and the FWHM of the sharp peaks is around 0.3 nm. With further increasing the excitation power, more such sharp peaks appear, and the intensity of the peaks increases greatly. It is visible that the PL intensity increases gradually then abruptly with the excitation power. The appearance of sharp peaks at elevated excitation pumping power reveals that lasing has been realized in the ZnO layer.


Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

PL spectra of the ZnO film excited by a 266 nm laser.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4555170&req=5

f4: PL spectra of the ZnO film excited by a 266 nm laser.
Mentions: It is accepted that due to the relatively large exciton binding energy of ZnO (60 meV), lasing can be realized via an exciton-exciton scattering mode, and the threshold of which can be over two orders of magnitude smaller than that realized via an electron-hole pair mode20. Therefore, it is expected that low-threshold lasing may be realized in ZnO. Actually, many lasing emissions have been observed in ZnO films, nanostructures and powders21222324252627, To show the feasibility of the electrostatic doping in ZnO based lasers, optically pumped lasing has been measured on the ZnO layer employed as active layer of the electrostatic doping, and the spectra are shown in Fig. 4. When the pumping power is 0.15 mW, although the emission of the ZnO layer is weak, a broad band at around 380 nm can also be observed, which corresponds to the NBE emission of ZnO, and the full-width at half maximum (FWHM) of the emission is about 10.5 nm. When the excitation power is increased to 0.50 mW, some sharp peaks superimposed on the low-energy side of the broad band, are visible in the spectrum, and the FWHM of the sharp peaks is around 0.3 nm. With further increasing the excitation power, more such sharp peaks appear, and the intensity of the peaks increases greatly. It is visible that the PL intensity increases gradually then abruptly with the excitation power. The appearance of sharp peaks at elevated excitation pumping power reveals that lasing has been realized in the ZnO layer.

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.