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Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus

(a) EL spectra measured from the top surface of the Au/MgO/ZnO structure. In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The inset shows the dependence of the integrated emission intensity on /IDS/; (b) Far-field emission image recorded from the top surface of the Au/MgO/ZnO structure.
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f3: (a) EL spectra measured from the top surface of the Au/MgO/ZnO structure. In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The inset shows the dependence of the integrated emission intensity on /IDS/; (b) Far-field emission image recorded from the top surface of the Au/MgO/ZnO structure.

Mentions: When a forward bias voltage is applied onto the quasi p-n junctions formed via the electrostatic doping method, the electrons in the undoped region will be injected into the inversion region, and recombine with holes there, then emission may be obtained. Experimentally, by fixing the gate voltage at −50 V, when a bias is applied onto the source and the drain contact, obvious emission has been observed from the top surface of the structure, the spectrum of which is shown in Fig. 3a. It shows a dominant peak at about 390 nm, which is the typical NBE emission of ZnO, while the deep-level related emission is weak. The dependence of the integrated emission intensity of the device recorded from the top surface on the injection current between the source and drain contact (/IDS/) is shown in the inset of Fig. 3a. It reveals that the emission intensity increases with the injection current, and it saturates gradually at larger injection current. Figure 3b plots the far-field emission image recorded from the top surface of the Au/MgO/ZnO structure. Obvious blue emission can be clearly observed along the gate electrode, which verifies that the radiative recombination between electrons and holes occurs mainly in the ZnO film near the gate electrode, confirming that the validity of the electrostatic doping route.


Ultraviolet Lasers Realized via Electrostatic Doping Method.

Liu XY, Shan CX, Zhu H, Li BH, Jiang MM, Yu SF, Shen DZ - Sci Rep (2015)

(a) EL spectra measured from the top surface of the Au/MgO/ZnO structure. In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The inset shows the dependence of the integrated emission intensity on /IDS/; (b) Far-field emission image recorded from the top surface of the Au/MgO/ZnO structure.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4555170&req=5

f3: (a) EL spectra measured from the top surface of the Au/MgO/ZnO structure. In the measurement, /VGS/ is set as −50 V and /IDS/ varies from 0.1 to 2.5 mA. The inset shows the dependence of the integrated emission intensity on /IDS/; (b) Far-field emission image recorded from the top surface of the Au/MgO/ZnO structure.
Mentions: When a forward bias voltage is applied onto the quasi p-n junctions formed via the electrostatic doping method, the electrons in the undoped region will be injected into the inversion region, and recombine with holes there, then emission may be obtained. Experimentally, by fixing the gate voltage at −50 V, when a bias is applied onto the source and the drain contact, obvious emission has been observed from the top surface of the structure, the spectrum of which is shown in Fig. 3a. It shows a dominant peak at about 390 nm, which is the typical NBE emission of ZnO, while the deep-level related emission is weak. The dependence of the integrated emission intensity of the device recorded from the top surface on the injection current between the source and drain contact (/IDS/) is shown in the inset of Fig. 3a. It reveals that the emission intensity increases with the injection current, and it saturates gradually at larger injection current. Figure 3b plots the far-field emission image recorded from the top surface of the Au/MgO/ZnO structure. Obvious blue emission can be clearly observed along the gate electrode, which verifies that the radiative recombination between electrons and holes occurs mainly in the ZnO film near the gate electrode, confirming that the validity of the electrostatic doping route.

Bottom Line: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically.Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

ABSTRACT
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus