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Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

Younis A, Chu D, Li S - Sci Rep (2015)

Bottom Line: Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities.In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized.Based on a careful examination of the device's retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

View Article: PubMed Central - PubMed

Affiliation: School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia.

ABSTRACT
Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device's retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

No MeSH data available.


Related in: MedlinePlus

Device performance evaluation based on monitoring of its (a) programming and (b) erasing characteristics with and without the application of UV irradiation.
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f2: Device performance evaluation based on monitoring of its (a) programming and (b) erasing characteristics with and without the application of UV irradiation.

Mentions: The superior device performance observed under UV irradiation was also verified by applying alternating current (AC) pulses to estimate the device response time in the programming and erasing modes. In these measurements, the set and reset characteristics were measured under AC pulse biases with pulse widths ranging from 1 ns to 100 ms at fixed pulse heights of +3/−3 V. A function generator (SRS, SG 390 series) was used to supply the AC pulses of different widths (frequencies), and a source metre (Keithley 2400) was connected to the device to record its current level. To measure the current level of the device, a constant read voltage of 0.3 V was applied for 3 seconds with a step of 0.1 s. The values shown in Fig. 2(a) represent the average current values recorded between 0.5 and 3 s during the application of the read voltage. Moreover, the same measurements were repeated at different times for three different samples. The current values presented in Fig. 2 are the average set and reset times for the three different samples.


Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

Younis A, Chu D, Li S - Sci Rep (2015)

Device performance evaluation based on monitoring of its (a) programming and (b) erasing characteristics with and without the application of UV irradiation.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4555098&req=5

f2: Device performance evaluation based on monitoring of its (a) programming and (b) erasing characteristics with and without the application of UV irradiation.
Mentions: The superior device performance observed under UV irradiation was also verified by applying alternating current (AC) pulses to estimate the device response time in the programming and erasing modes. In these measurements, the set and reset characteristics were measured under AC pulse biases with pulse widths ranging from 1 ns to 100 ms at fixed pulse heights of +3/−3 V. A function generator (SRS, SG 390 series) was used to supply the AC pulses of different widths (frequencies), and a source metre (Keithley 2400) was connected to the device to record its current level. To measure the current level of the device, a constant read voltage of 0.3 V was applied for 3 seconds with a step of 0.1 s. The values shown in Fig. 2(a) represent the average current values recorded between 0.5 and 3 s during the application of the read voltage. Moreover, the same measurements were repeated at different times for three different samples. The current values presented in Fig. 2 are the average set and reset times for the three different samples.

Bottom Line: Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities.In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized.Based on a careful examination of the device's retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

View Article: PubMed Central - PubMed

Affiliation: School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia.

ABSTRACT
Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device's retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

No MeSH data available.


Related in: MedlinePlus