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CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask.

Meng L, Gao J, He X, Li J, Wei Y, Yan J - Nanoscale Res Lett (2015)

Bottom Line: It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls.Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable.It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China, menglingkuan@ime.ac.cn.

ABSTRACT
We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate SiO2 nanostructures including nanoline, nanotrench, and nanohole arrays. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. This behavior may be attributed to the presence of high concentration of dangling bonds in α-Si mask surface. By controlling the process condition, it is possible to achieve a desired vertical etched profile with a controlled size. Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable. The obtained SiO2 pattern can be further used as a nanotemplate to produce periodic or more complex silicon nanostructures. Moreover, this novel top-down approach is a potentially universal method that is fully compatible with the currently existing Si-based CMOS technologies. It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way.

No MeSH data available.


Related in: MedlinePlus

Cross-sectional and top-down SiO2 nanohole SEM views. a Arrays of α-Si mask nanohole are patterned by Cl2/HBr/O2 plasma chemistry. b SiO2 nanotrench arrays fabricated show an almost vertical etched profile with smooth sidewalls, and here, the α-Si mask has been removed selectively. cTop view of (b) showing a highly uniform etch performance
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Fig5: Cross-sectional and top-down SiO2 nanohole SEM views. a Arrays of α-Si mask nanohole are patterned by Cl2/HBr/O2 plasma chemistry. b SiO2 nanotrench arrays fabricated show an almost vertical etched profile with smooth sidewalls, and here, the α-Si mask has been removed selectively. cTop view of (b) showing a highly uniform etch performance

Mentions: Similarly, besides providing a much simpler approach than conventional patterning strategy for generating nanotrench arrays, the straightforward and CMOS-compatible approach enables a facile creation of SiO2 nanohole arrays that will be not easily available by traditional single mask etch technology. Figure 5 shows that the arrays of high-quality and periodic nanohole with around 45 nm diameter and 140-nm period have been fabricated successfully using the same process condition as described in Fig. 4. It implies that the simple process is easily extended to different fabrications of SiO2 nanostructures. In Fig. 5b, the SiO2 nanohole arrays clearly indicate that all etched holes are almost perfectly straight and highly uniform, demonstrating a very good etch controllability.Fig. 5


CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask.

Meng L, Gao J, He X, Li J, Wei Y, Yan J - Nanoscale Res Lett (2015)

Cross-sectional and top-down SiO2 nanohole SEM views. a Arrays of α-Si mask nanohole are patterned by Cl2/HBr/O2 plasma chemistry. b SiO2 nanotrench arrays fabricated show an almost vertical etched profile with smooth sidewalls, and here, the α-Si mask has been removed selectively. cTop view of (b) showing a highly uniform etch performance
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
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getmorefigures.php?uid=PMC4549353&req=5

Fig5: Cross-sectional and top-down SiO2 nanohole SEM views. a Arrays of α-Si mask nanohole are patterned by Cl2/HBr/O2 plasma chemistry. b SiO2 nanotrench arrays fabricated show an almost vertical etched profile with smooth sidewalls, and here, the α-Si mask has been removed selectively. cTop view of (b) showing a highly uniform etch performance
Mentions: Similarly, besides providing a much simpler approach than conventional patterning strategy for generating nanotrench arrays, the straightforward and CMOS-compatible approach enables a facile creation of SiO2 nanohole arrays that will be not easily available by traditional single mask etch technology. Figure 5 shows that the arrays of high-quality and periodic nanohole with around 45 nm diameter and 140-nm period have been fabricated successfully using the same process condition as described in Fig. 4. It implies that the simple process is easily extended to different fabrications of SiO2 nanostructures. In Fig. 5b, the SiO2 nanohole arrays clearly indicate that all etched holes are almost perfectly straight and highly uniform, demonstrating a very good etch controllability.Fig. 5

Bottom Line: It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls.Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable.It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China, menglingkuan@ime.ac.cn.

ABSTRACT
We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate SiO2 nanostructures including nanoline, nanotrench, and nanohole arrays. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. This behavior may be attributed to the presence of high concentration of dangling bonds in α-Si mask surface. By controlling the process condition, it is possible to achieve a desired vertical etched profile with a controlled size. Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable. The obtained SiO2 pattern can be further used as a nanotemplate to produce periodic or more complex silicon nanostructures. Moreover, this novel top-down approach is a potentially universal method that is fully compatible with the currently existing Si-based CMOS technologies. It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way.

No MeSH data available.


Related in: MedlinePlus