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Silicon photonic crystal thermal emitter at near-infrared wavelengths.

O'Regan BJ, Wang Y, Krauss TF - Sci Rep (2015)

Bottom Line: The device is resistively heated by passing current through the photonic crystal membrane.At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18.A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection.

View Article: PubMed Central - PubMed

Affiliation: School of Physics &Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.

ABSTRACT
Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

No MeSH data available.


Related in: MedlinePlus

Measured thermal emission spectra.Emission spectra measured with a bias of 72 V, 74 V, 76 V and 78 V, along with the measured blackbody reference spectrum. The blackbody reference curve was obtained from an infrared thermal source (Scitec IR-12K) heated to 1117 K. The light emission was collected over an angle of ≈12° around the normal for both devices. The theoretical Planck blackbody emission at 1117 K is also included.
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f5: Measured thermal emission spectra.Emission spectra measured with a bias of 72 V, 74 V, 76 V and 78 V, along with the measured blackbody reference spectrum. The blackbody reference curve was obtained from an infrared thermal source (Scitec IR-12K) heated to 1117 K. The light emission was collected over an angle of ≈12° around the normal for both devices. The theoretical Planck blackbody emission at 1117 K is also included.

Mentions: Figure 5 shows emission spectra with a bias of 72 V, 74 V, 76 V and 78 V. The estimated temperature of each spectrum is 1046 K, 1093 K, 1106 K, and 1117 K, respectively. For each thermal emission spectrum measurement, the device was kept at that temperature for approximately 15 minutes to complete the data acquisition. The black dashed curve is a measured blackbody radiation curve at ≈1117 K taken for reference from an infrared thermal source, while the solid black line indicates a theoretical Planck21 blackbody curve at 1117 K. The emission spectra clearly show three distinct emission peaks and we compare the spectrum at 1117 K to the PhC bandstructure in Fig. 6. This bandstructure represents the highly doped PhC structure at high temperature (1117 K), while in contrast to Fig. 3(a), it takes both index reduction due to doping and index increase due to temperature into account. In fact, the reduction in refractive index due to doping (Δndoped = −0.19, at 1.40 μm) and the refractive index increase due to heating (Δnthermal = +0.18, at 1.46 μm, 1117 K) are of very similar magnitude. These three emission peaks correlate excellently with the three bandstructure resonances indicated in Fig. 6. The Q factor of the peak at 1.46 μm is ≈18, with a FWHM of ≈80 nm.


Silicon photonic crystal thermal emitter at near-infrared wavelengths.

O'Regan BJ, Wang Y, Krauss TF - Sci Rep (2015)

Measured thermal emission spectra.Emission spectra measured with a bias of 72 V, 74 V, 76 V and 78 V, along with the measured blackbody reference spectrum. The blackbody reference curve was obtained from an infrared thermal source (Scitec IR-12K) heated to 1117 K. The light emission was collected over an angle of ≈12° around the normal for both devices. The theoretical Planck blackbody emission at 1117 K is also included.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4544018&req=5

f5: Measured thermal emission spectra.Emission spectra measured with a bias of 72 V, 74 V, 76 V and 78 V, along with the measured blackbody reference spectrum. The blackbody reference curve was obtained from an infrared thermal source (Scitec IR-12K) heated to 1117 K. The light emission was collected over an angle of ≈12° around the normal for both devices. The theoretical Planck blackbody emission at 1117 K is also included.
Mentions: Figure 5 shows emission spectra with a bias of 72 V, 74 V, 76 V and 78 V. The estimated temperature of each spectrum is 1046 K, 1093 K, 1106 K, and 1117 K, respectively. For each thermal emission spectrum measurement, the device was kept at that temperature for approximately 15 minutes to complete the data acquisition. The black dashed curve is a measured blackbody radiation curve at ≈1117 K taken for reference from an infrared thermal source, while the solid black line indicates a theoretical Planck21 blackbody curve at 1117 K. The emission spectra clearly show three distinct emission peaks and we compare the spectrum at 1117 K to the PhC bandstructure in Fig. 6. This bandstructure represents the highly doped PhC structure at high temperature (1117 K), while in contrast to Fig. 3(a), it takes both index reduction due to doping and index increase due to temperature into account. In fact, the reduction in refractive index due to doping (Δndoped = −0.19, at 1.40 μm) and the refractive index increase due to heating (Δnthermal = +0.18, at 1.46 μm, 1117 K) are of very similar magnitude. These three emission peaks correlate excellently with the three bandstructure resonances indicated in Fig. 6. The Q factor of the peak at 1.46 μm is ≈18, with a FWHM of ≈80 nm.

Bottom Line: The device is resistively heated by passing current through the photonic crystal membrane.At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18.A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection.

View Article: PubMed Central - PubMed

Affiliation: School of Physics &Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.

ABSTRACT
Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

No MeSH data available.


Related in: MedlinePlus