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Silicon photonic crystal thermal emitter at near-infrared wavelengths.

O'Regan BJ, Wang Y, Krauss TF - Sci Rep (2015)

Bottom Line: The device is resistively heated by passing current through the photonic crystal membrane.At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18.A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection.

View Article: PubMed Central - PubMed

Affiliation: School of Physics &Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.

ABSTRACT
Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

No MeSH data available.


Related in: MedlinePlus

High magnification infrared camera images of the device using a 50x objective.(a) No bias applied at room temperature and (b) with a bias of 78 V applied reaching a temperature of 1117 K.
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f4: High magnification infrared camera images of the device using a 50x objective.(a) No bias applied at room temperature and (b) with a bias of 78 V applied reaching a temperature of 1117 K.

Mentions: Figure 4 shows two zoomed-in infrared camera images of the device imaged with a 50x objective. Figure 4(a) is taken at room temperature while Fig. 4(b) is taken at an elevated temperature of approximately 1117 K with a bias of 78 V applied. The support strips are clearly apparent, as they are slightly cooler and hence darker. The device was kept at elevated temperatures for approximately one hour to complete all the thermal emission spectrum measurements. Afterwards, the photonic crystal was inspected with an optical microscope and no surface defects or any other degradation of the device was visible, except for a small colour change at the very centre of the photonic crystal strips where the temperature reaches its highest point. When the same device was reheated, there was no change in the emission properties suggesting the device is stable at these high temperatures.


Silicon photonic crystal thermal emitter at near-infrared wavelengths.

O'Regan BJ, Wang Y, Krauss TF - Sci Rep (2015)

High magnification infrared camera images of the device using a 50x objective.(a) No bias applied at room temperature and (b) with a bias of 78 V applied reaching a temperature of 1117 K.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4544018&req=5

f4: High magnification infrared camera images of the device using a 50x objective.(a) No bias applied at room temperature and (b) with a bias of 78 V applied reaching a temperature of 1117 K.
Mentions: Figure 4 shows two zoomed-in infrared camera images of the device imaged with a 50x objective. Figure 4(a) is taken at room temperature while Fig. 4(b) is taken at an elevated temperature of approximately 1117 K with a bias of 78 V applied. The support strips are clearly apparent, as they are slightly cooler and hence darker. The device was kept at elevated temperatures for approximately one hour to complete all the thermal emission spectrum measurements. Afterwards, the photonic crystal was inspected with an optical microscope and no surface defects or any other degradation of the device was visible, except for a small colour change at the very centre of the photonic crystal strips where the temperature reaches its highest point. When the same device was reheated, there was no change in the emission properties suggesting the device is stable at these high temperatures.

Bottom Line: The device is resistively heated by passing current through the photonic crystal membrane.At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18.A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection.

View Article: PubMed Central - PubMed

Affiliation: School of Physics &Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.

ABSTRACT
Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

No MeSH data available.


Related in: MedlinePlus