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Formation of broadband antireflective and superhydrophilic subwavelength structures on fused silica using one-step self-masking reactive ion etching.

Ye X, Jiang X, Huang J, Geng F, Sun L, Zu X, Wu W, Zheng W - Sci Rep (2015)

Bottom Line: The measured antireflection properties are consistent with the results of theoretical analysis using a finite-difference time-domain (FDTD) method.This method is also applicable to diffraction grating fabrication.Moreover, the surface of the subwavelength structures exhibits significant superhydrophilic properties.

View Article: PubMed Central - PubMed

Affiliation: Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 (P.R. China).

ABSTRACT
Fused silica subwavelength structures (SWSs) with an average period of ~100 nm were fabricated using an efficient approach based on one-step self-masking reactive ion etching. The subwavelength structures exhibited excellent broadband antireflection properties from the ultraviolet to near-infrared wavelength range. These properties are attributable to the graded refractive index for the transition from air to the fused silica substrate that is produced by the ideal nanocone subwavelength structures. The transmittance in the 400-700 nm range increased from approximately 93% for the polished fused silica to greater than 99% for the subwavelength structure layer on fused silica. Achieving broadband antireflection in the visible and near-infrared wavelength range by appropriate matching of the SWS heights on the front and back sides of the fused silica is a novel strategy. The measured antireflection properties are consistent with the results of theoretical analysis using a finite-difference time-domain (FDTD) method. This method is also applicable to diffraction grating fabrication. Moreover, the surface of the subwavelength structures exhibits significant superhydrophilic properties.

No MeSH data available.


Related in: MedlinePlus

Morphology of the fused silica SWSs prepared using different etching times:(A) 20 min, (B) 30 min, (C) 40 min. (D) Transmission of the fused silica SWS samples after etching times of 20 min (green line), 30 min (red line), and 40 min (blue line).
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f3: Morphology of the fused silica SWSs prepared using different etching times:(A) 20 min, (B) 30 min, (C) 40 min. (D) Transmission of the fused silica SWS samples after etching times of 20 min (green line), 30 min (red line), and 40 min (blue line).

Mentions: The SWS height was controlled by varying the etching time. As shown in Fig. 3(A), the SWS height after 20 min of etching was approximately 290 nm. By extending the etching time to 30 min, the SWS height increased to 410 nm (Fig. 3B). After a further increase in the etching time to 40 min, the SWS height was approximately 540 nm. AR behavior was characterized by measuring transmission. As shown in Fig. 3(D), the transmittance for the 480–800 nm wavelength range increased from approximately 93% for the fused silica substrate (black line) to greater than 96% for the 20-min single-side etched sample (green line). The other two samples also exhibited strong AR behavior at the measured wavelengths. For instance, the transmittance of the S4 sample increased to greater than 96% (30 min etched, red line) for the 550–970 nm wavelength range. The transmittance of the 40-min etched sample (sample S5, blue line) was greater than 96% for the 650–1250 nm wavelength range. The SWSs with greater height exhibited improved broadband AR performance. As the etching time increased, the height of the SWSs gradually increased, whereas the average SWS period increased because the adjacent structures aggregated together. In addition, as the SWS height increased, the transmittance in the short wavelength range decreased, primarily due to light scattering on the surface.


Formation of broadband antireflective and superhydrophilic subwavelength structures on fused silica using one-step self-masking reactive ion etching.

Ye X, Jiang X, Huang J, Geng F, Sun L, Zu X, Wu W, Zheng W - Sci Rep (2015)

Morphology of the fused silica SWSs prepared using different etching times:(A) 20 min, (B) 30 min, (C) 40 min. (D) Transmission of the fused silica SWS samples after etching times of 20 min (green line), 30 min (red line), and 40 min (blue line).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4542686&req=5

f3: Morphology of the fused silica SWSs prepared using different etching times:(A) 20 min, (B) 30 min, (C) 40 min. (D) Transmission of the fused silica SWS samples after etching times of 20 min (green line), 30 min (red line), and 40 min (blue line).
Mentions: The SWS height was controlled by varying the etching time. As shown in Fig. 3(A), the SWS height after 20 min of etching was approximately 290 nm. By extending the etching time to 30 min, the SWS height increased to 410 nm (Fig. 3B). After a further increase in the etching time to 40 min, the SWS height was approximately 540 nm. AR behavior was characterized by measuring transmission. As shown in Fig. 3(D), the transmittance for the 480–800 nm wavelength range increased from approximately 93% for the fused silica substrate (black line) to greater than 96% for the 20-min single-side etched sample (green line). The other two samples also exhibited strong AR behavior at the measured wavelengths. For instance, the transmittance of the S4 sample increased to greater than 96% (30 min etched, red line) for the 550–970 nm wavelength range. The transmittance of the 40-min etched sample (sample S5, blue line) was greater than 96% for the 650–1250 nm wavelength range. The SWSs with greater height exhibited improved broadband AR performance. As the etching time increased, the height of the SWSs gradually increased, whereas the average SWS period increased because the adjacent structures aggregated together. In addition, as the SWS height increased, the transmittance in the short wavelength range decreased, primarily due to light scattering on the surface.

Bottom Line: The measured antireflection properties are consistent with the results of theoretical analysis using a finite-difference time-domain (FDTD) method.This method is also applicable to diffraction grating fabrication.Moreover, the surface of the subwavelength structures exhibits significant superhydrophilic properties.

View Article: PubMed Central - PubMed

Affiliation: Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 (P.R. China).

ABSTRACT
Fused silica subwavelength structures (SWSs) with an average period of ~100 nm were fabricated using an efficient approach based on one-step self-masking reactive ion etching. The subwavelength structures exhibited excellent broadband antireflection properties from the ultraviolet to near-infrared wavelength range. These properties are attributable to the graded refractive index for the transition from air to the fused silica substrate that is produced by the ideal nanocone subwavelength structures. The transmittance in the 400-700 nm range increased from approximately 93% for the polished fused silica to greater than 99% for the subwavelength structure layer on fused silica. Achieving broadband antireflection in the visible and near-infrared wavelength range by appropriate matching of the SWS heights on the front and back sides of the fused silica is a novel strategy. The measured antireflection properties are consistent with the results of theoretical analysis using a finite-difference time-domain (FDTD) method. This method is also applicable to diffraction grating fabrication. Moreover, the surface of the subwavelength structures exhibits significant superhydrophilic properties.

No MeSH data available.


Related in: MedlinePlus