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Terahertz detectors arrays based on orderly aligned InN nanowires.

Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B - Sci Rep (2015)

Bottom Line: The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method.Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose.The detector showed good photoresponse as well as low noise level.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.

ABSTRACT
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

No MeSH data available.


(a) Microscope image of 3 × 3 THz detectors array. Scale bar: 100 μm. (b) Responsivity curves of different number of individual detectors connected in series.
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f9: (a) Microscope image of 3 × 3 THz detectors array. Scale bar: 100 μm. (b) Responsivity curves of different number of individual detectors connected in series.

Mentions: The current devices geometry’s tremendous advantage lays in the ability of realizing dense array of nanowires THz detectors. Hence the fabrication of pixel-like THz detectors array was done by larger-scale photolithography, transfer-printing and FIB electrodes deposition. A chip carrying 3 × 3 detectors is shown in the microscope image of Fig. 9a. Individual detector was designed the same way in Fig. 6. Wire bonding was performed on this chip and successfully enabled 7 operational devices. The active area of the chip is ~ 1.5 mm in size, which is on the same order of the incidence THz wavelength. On this chip, if more than two detectors are connected in series, it is naturally possible to render stronger photovoltage output. Responsivity characterization was performed, under the assumption that all incidence wave power were absorbed. The result for different number of devices connection is shown in Fig. 9b. Clearly, 7 devices together give the highest responsivity of 1.1 V/W. Notably, the change of responsivity intensity from 1 ~ 5 devices is not as large as from 5 ~ 7 devices, which is probably due to diffraction associated non-linear absorption phenomena. Nevertheless, the integration of multiple device not only produced stronger photoresponse, it paved the way for practical applications including focal plane pixel THz camera, high output photoconductive THz emitters, etc.


Terahertz detectors arrays based on orderly aligned InN nanowires.

Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B - Sci Rep (2015)

(a) Microscope image of 3 × 3 THz detectors array. Scale bar: 100 μm. (b) Responsivity curves of different number of individual detectors connected in series.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4542509&req=5

f9: (a) Microscope image of 3 × 3 THz detectors array. Scale bar: 100 μm. (b) Responsivity curves of different number of individual detectors connected in series.
Mentions: The current devices geometry’s tremendous advantage lays in the ability of realizing dense array of nanowires THz detectors. Hence the fabrication of pixel-like THz detectors array was done by larger-scale photolithography, transfer-printing and FIB electrodes deposition. A chip carrying 3 × 3 detectors is shown in the microscope image of Fig. 9a. Individual detector was designed the same way in Fig. 6. Wire bonding was performed on this chip and successfully enabled 7 operational devices. The active area of the chip is ~ 1.5 mm in size, which is on the same order of the incidence THz wavelength. On this chip, if more than two detectors are connected in series, it is naturally possible to render stronger photovoltage output. Responsivity characterization was performed, under the assumption that all incidence wave power were absorbed. The result for different number of devices connection is shown in Fig. 9b. Clearly, 7 devices together give the highest responsivity of 1.1 V/W. Notably, the change of responsivity intensity from 1 ~ 5 devices is not as large as from 5 ~ 7 devices, which is probably due to diffraction associated non-linear absorption phenomena. Nevertheless, the integration of multiple device not only produced stronger photoresponse, it paved the way for practical applications including focal plane pixel THz camera, high output photoconductive THz emitters, etc.

Bottom Line: The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method.Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose.The detector showed good photoresponse as well as low noise level.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.

ABSTRACT
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

No MeSH data available.