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Terahertz detectors arrays based on orderly aligned InN nanowires.

Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B - Sci Rep (2015)

Bottom Line: The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method.Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose.The detector showed good photoresponse as well as low noise level.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.

ABSTRACT
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

No MeSH data available.


PL spectra InN nanostructures at room temperature.The inset shows microscope images of the InN nano-necklaces and nanowires.
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f5: PL spectra InN nanostructures at room temperature.The inset shows microscope images of the InN nano-necklaces and nanowires.

Mentions: The photoluminescence (PL) of the two kinds of structures was carried out (Fig. 5) to investigate the optical properties of single InN nanowire and nano-necklace. The strong emission peaks around 1700 nm can be seen clearly, which corresponds to the near band edge (NBE) emission of InN. This IR-emission peak position is consistent with the NBE emission observed from reported InN nanorods26 and epitaxial films27. Notefully, the emission intensity from the nano-necklace is stronger, and is tentatively attributed to the larger material size as well as muti-scattering inside one nano-necklace for three dimensional cavity-like light resonant28.


Terahertz detectors arrays based on orderly aligned InN nanowires.

Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B - Sci Rep (2015)

PL spectra InN nanostructures at room temperature.The inset shows microscope images of the InN nano-necklaces and nanowires.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4542509&req=5

f5: PL spectra InN nanostructures at room temperature.The inset shows microscope images of the InN nano-necklaces and nanowires.
Mentions: The photoluminescence (PL) of the two kinds of structures was carried out (Fig. 5) to investigate the optical properties of single InN nanowire and nano-necklace. The strong emission peaks around 1700 nm can be seen clearly, which corresponds to the near band edge (NBE) emission of InN. This IR-emission peak position is consistent with the NBE emission observed from reported InN nanorods26 and epitaxial films27. Notefully, the emission intensity from the nano-necklace is stronger, and is tentatively attributed to the larger material size as well as muti-scattering inside one nano-necklace for three dimensional cavity-like light resonant28.

Bottom Line: The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method.Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose.The detector showed good photoresponse as well as low noise level.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.

ABSTRACT
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

No MeSH data available.