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Terahertz detectors arrays based on orderly aligned InN nanowires.

Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B - Sci Rep (2015)

Bottom Line: The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method.Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose.The detector showed good photoresponse as well as low noise level.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.

ABSTRACT
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

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(a) SEM image of as-synthesized InN nanostructures. scale bar: 1 μm. (b) The corresponding EDS spectrum of the InN nanostructures taken at spot spectrum 9 which are marked in (a). Inset: the corresponding composition of the nanostructures determined by EDS.
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f3: (a) SEM image of as-synthesized InN nanostructures. scale bar: 1 μm. (b) The corresponding EDS spectrum of the InN nanostructures taken at spot spectrum 9 which are marked in (a). Inset: the corresponding composition of the nanostructures determined by EDS.

Mentions: The crystal structure of the as-obtained product was characterized by X-ray diffraction (XRD) (Fig. 2). All of the strong reflection peaks can be indexed to wurtzite-type InN (w-InN). According to the Bragg equation (2dsinθ = λ) and interplanar spacing formula , where d, θ, λ, {hkl} are the interplanar spacing, diffraction angle, wavelength, indices of crystal face, respectively. The lattice constants can be calculated as: a = 0.35 nm and c = 0.57 nm (JCPDS card NO. 02-1450), which match well with the (100) and (002) planes of w-InN InN, respectively21. XRD peaks related to other phases (such as In and In2O3) were not found. Energy dispersive spectroscopy (EDS) measurements were performed to determine the chemical composition of the samples. Fig. 3a illustrates a typical SEM image of sample part that found co-existence of InN nano-necklaces and nanowires. The EDS spectrum of marked position in Fig. 3a is shown in Fig. 3b. Distinct In and N peaks were found to confirm the InN elemental composition, while the silicon peak originates from the substrate. Oxygen peak is attributed to SiO2 and Indium oxide related substances. The atomic ratio of In: N is close to 1 : 1, suggesting good stoichiometry of the material.


Terahertz detectors arrays based on orderly aligned InN nanowires.

Chen X, Liu H, Li Q, Chen H, Peng R, Chu S, Cheng B - Sci Rep (2015)

(a) SEM image of as-synthesized InN nanostructures. scale bar: 1 μm. (b) The corresponding EDS spectrum of the InN nanostructures taken at spot spectrum 9 which are marked in (a). Inset: the corresponding composition of the nanostructures determined by EDS.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
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getmorefigures.php?uid=PMC4542509&req=5

f3: (a) SEM image of as-synthesized InN nanostructures. scale bar: 1 μm. (b) The corresponding EDS spectrum of the InN nanostructures taken at spot spectrum 9 which are marked in (a). Inset: the corresponding composition of the nanostructures determined by EDS.
Mentions: The crystal structure of the as-obtained product was characterized by X-ray diffraction (XRD) (Fig. 2). All of the strong reflection peaks can be indexed to wurtzite-type InN (w-InN). According to the Bragg equation (2dsinθ = λ) and interplanar spacing formula , where d, θ, λ, {hkl} are the interplanar spacing, diffraction angle, wavelength, indices of crystal face, respectively. The lattice constants can be calculated as: a = 0.35 nm and c = 0.57 nm (JCPDS card NO. 02-1450), which match well with the (100) and (002) planes of w-InN InN, respectively21. XRD peaks related to other phases (such as In and In2O3) were not found. Energy dispersive spectroscopy (EDS) measurements were performed to determine the chemical composition of the samples. Fig. 3a illustrates a typical SEM image of sample part that found co-existence of InN nano-necklaces and nanowires. The EDS spectrum of marked position in Fig. 3a is shown in Fig. 3b. Distinct In and N peaks were found to confirm the InN elemental composition, while the silicon peak originates from the substrate. Oxygen peak is attributed to SiO2 and Indium oxide related substances. The atomic ratio of In: N is close to 1 : 1, suggesting good stoichiometry of the material.

Bottom Line: The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method.Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose.The detector showed good photoresponse as well as low noise level.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.

ABSTRACT
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

No MeSH data available.


Related in: MedlinePlus