Limits...
Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N - Sensors (Basel) (2015)

Bottom Line: The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz.Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator.The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.

ABSTRACT
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

No MeSH data available.


Frequency response obtained from the CMOS-NEMS clamped-clamped beam with the piezoresistive transduction method in vacuum.
© Copyright Policy
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4541920&req=5

sensors-15-17036-f004: Frequency response obtained from the CMOS-NEMS clamped-clamped beam with the piezoresistive transduction method in vacuum.

Mentions: It is important to consider that the density current flow through the clamped-clamped beam limits the maximum power applied over the resonator to prevent its melting. However the discrete mixer requires enough power to work properly, so a voltage controlled attenuator is placed between the power splitter and the resonator. With an AC signal power of 10 dBm the discrete mixer works properly and with an attenuation of 17 dB the resulting power applied directly to the resonator is −10 dBm. Maintaining a DC bias voltage of 15 V, an AC actuation voltage of 10 dBm and an AC voltage through the beam of −10 dBm, the motional current across the beam presents the frequency response depicted in Figure 4 (with a frequency offset, Δf = 543.21 Hz).


Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N - Sensors (Basel) (2015)

Frequency response obtained from the CMOS-NEMS clamped-clamped beam with the piezoresistive transduction method in vacuum.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4541920&req=5

sensors-15-17036-f004: Frequency response obtained from the CMOS-NEMS clamped-clamped beam with the piezoresistive transduction method in vacuum.
Mentions: It is important to consider that the density current flow through the clamped-clamped beam limits the maximum power applied over the resonator to prevent its melting. However the discrete mixer requires enough power to work properly, so a voltage controlled attenuator is placed between the power splitter and the resonator. With an AC signal power of 10 dBm the discrete mixer works properly and with an attenuation of 17 dB the resulting power applied directly to the resonator is −10 dBm. Maintaining a DC bias voltage of 15 V, an AC actuation voltage of 10 dBm and an AC voltage through the beam of −10 dBm, the motional current across the beam presents the frequency response depicted in Figure 4 (with a frequency offset, Δf = 543.21 Hz).

Bottom Line: The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz.Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator.The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.

ABSTRACT
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

No MeSH data available.