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Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N - Sensors (Basel) (2015)

Bottom Line: The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz.Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator.The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.

ABSTRACT
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

No MeSH data available.


(a) Experimental frequency response (magnitude and phase) and Electrical characterization set-up for capacitive actuation and sensing; (b) Fitting of the experimental frequency response with the electrical equivalent circuit shown in the inset.
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sensors-15-17036-f002: (a) Experimental frequency response (magnitude and phase) and Electrical characterization set-up for capacitive actuation and sensing; (b) Fitting of the experimental frequency response with the electrical equivalent circuit shown in the inset.

Mentions: The frequency response of the CC beam using capacitive read-out is acquired directly from a network analyser according to the set-up of Figure 2a.


Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N - Sensors (Basel) (2015)

(a) Experimental frequency response (magnitude and phase) and Electrical characterization set-up for capacitive actuation and sensing; (b) Fitting of the experimental frequency response with the electrical equivalent circuit shown in the inset.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4541920&req=5

sensors-15-17036-f002: (a) Experimental frequency response (magnitude and phase) and Electrical characterization set-up for capacitive actuation and sensing; (b) Fitting of the experimental frequency response with the electrical equivalent circuit shown in the inset.
Mentions: The frequency response of the CC beam using capacitive read-out is acquired directly from a network analyser according to the set-up of Figure 2a.

Bottom Line: The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz.Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator.The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.

ABSTRACT
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

No MeSH data available.