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Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N - Sensors (Basel) (2015)

Bottom Line: The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz.Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator.The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.

ABSTRACT
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

No MeSH data available.


Left: Optical image of the integrated Polysilicon clamped-clamped beam in the CMOS technology; Right: Detail of the polysilicon resonator after its releasing in a SEM image. The thickness of the double clamped-beam is 282 nm and the gaps between driver electrodes and beam are 100 nm. The inset shows Coventor simulations for the first in plane resonant mode at f0 = 25.5 MHz.
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sensors-15-17036-f001: Left: Optical image of the integrated Polysilicon clamped-clamped beam in the CMOS technology; Right: Detail of the polysilicon resonator after its releasing in a SEM image. The thickness of the double clamped-beam is 282 nm and the gaps between driver electrodes and beam are 100 nm. The inset shows Coventor simulations for the first in plane resonant mode at f0 = 25.5 MHz.

Mentions: The electrostatic actuation for the resonant NEMS operation is performed through the fixed polysilicon electrode (from the poly2 layer) placed 100 nm besides the CC-beam (in-plane actuation and movement, see Figure 1). Efficient vertical alignment between the two polysilicon layers for an in-plane movement is obtained due to their different thicknesses (280 nm for poly1 and 200 nm for poly2), the insulator layer thickness between them (40 nm) and the conformal deposition used [20,21]. The capacitive sensing is done by an additional driver of poly2 at the other side of the beam (in a two-port symmetrical configuration). Equal spaced driver electrodes are used. For piezoresistive sensing the two anchors of the beam are connected to pads to allow current flowing through the resonator.


Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N - Sensors (Basel) (2015)

Left: Optical image of the integrated Polysilicon clamped-clamped beam in the CMOS technology; Right: Detail of the polysilicon resonator after its releasing in a SEM image. The thickness of the double clamped-beam is 282 nm and the gaps between driver electrodes and beam are 100 nm. The inset shows Coventor simulations for the first in plane resonant mode at f0 = 25.5 MHz.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4541920&req=5

sensors-15-17036-f001: Left: Optical image of the integrated Polysilicon clamped-clamped beam in the CMOS technology; Right: Detail of the polysilicon resonator after its releasing in a SEM image. The thickness of the double clamped-beam is 282 nm and the gaps between driver electrodes and beam are 100 nm. The inset shows Coventor simulations for the first in plane resonant mode at f0 = 25.5 MHz.
Mentions: The electrostatic actuation for the resonant NEMS operation is performed through the fixed polysilicon electrode (from the poly2 layer) placed 100 nm besides the CC-beam (in-plane actuation and movement, see Figure 1). Efficient vertical alignment between the two polysilicon layers for an in-plane movement is obtained due to their different thicknesses (280 nm for poly1 and 200 nm for poly2), the insulator layer thickness between them (40 nm) and the conformal deposition used [20,21]. The capacitive sensing is done by an additional driver of poly2 at the other side of the beam (in a two-port symmetrical configuration). Equal spaced driver electrodes are used. For piezoresistive sensing the two anchors of the beam are connected to pads to allow current flowing through the resonator.

Bottom Line: The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz.Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator.The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.

ABSTRACT
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

No MeSH data available.