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Fabrication and Characterization of a CMOS-MEMS Humidity Sensor.

Dennis JO, Ahmed AY, Khir MH - Sensors (Basel) (2015)

Bottom Line: The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH.On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%.Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

View Article: PubMed Central - PubMed

Affiliation: Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, Perak Darul Ridzuan 32610, Malaysia. johndennis@petronas.com.my.

ABSTRACT
This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

No MeSH data available.


(a) FESEM image of CMOS-MEMS device with TiO2 paste deposited on its plate; (b) Zoomed-in FESEM micrograph of TiO2 nanoparticles. (c) EDX-spectrum of the TiO2 on the plate.
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sensors-15-16674-f006: (a) FESEM image of CMOS-MEMS device with TiO2 paste deposited on its plate; (b) Zoomed-in FESEM micrograph of TiO2 nanoparticles. (c) EDX-spectrum of the TiO2 on the plate.

Mentions: Figure 6a shows an FESEM image of the CMOS-MEMS humidity sensor with nanoparticle-sized TiO2 paste successfully deposited on its plate using a drop-coating method; Figure 6b is a zoomed-in view of an FESEM micrograph on the TiO2 patch on the plate showing the porous distribution of nanoparticles of TiO2; and Figure 6c shows EDX-spectrum of TiO2. The carbon peak observed in the EDX spectrum is from the binder material used to form the paste. The porous structure of TiO2 on the plate increases its surface area and thus is expected to enhance its sensitivity in the adsorption/desorption reaction of H2O on its surface.


Fabrication and Characterization of a CMOS-MEMS Humidity Sensor.

Dennis JO, Ahmed AY, Khir MH - Sensors (Basel) (2015)

(a) FESEM image of CMOS-MEMS device with TiO2 paste deposited on its plate; (b) Zoomed-in FESEM micrograph of TiO2 nanoparticles. (c) EDX-spectrum of the TiO2 on the plate.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4541900&req=5

sensors-15-16674-f006: (a) FESEM image of CMOS-MEMS device with TiO2 paste deposited on its plate; (b) Zoomed-in FESEM micrograph of TiO2 nanoparticles. (c) EDX-spectrum of the TiO2 on the plate.
Mentions: Figure 6a shows an FESEM image of the CMOS-MEMS humidity sensor with nanoparticle-sized TiO2 paste successfully deposited on its plate using a drop-coating method; Figure 6b is a zoomed-in view of an FESEM micrograph on the TiO2 patch on the plate showing the porous distribution of nanoparticles of TiO2; and Figure 6c shows EDX-spectrum of TiO2. The carbon peak observed in the EDX spectrum is from the binder material used to form the paste. The porous structure of TiO2 on the plate increases its surface area and thus is expected to enhance its sensitivity in the adsorption/desorption reaction of H2O on its surface.

Bottom Line: The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH.On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%.Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

View Article: PubMed Central - PubMed

Affiliation: Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, Perak Darul Ridzuan 32610, Malaysia. johndennis@petronas.com.my.

ABSTRACT
This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

No MeSH data available.