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Substantial Improvement of Short Wavelength Response in n-SiNW/PEDOT:PSS Solar Cell.

Ge Z, Xu L, Cao Y, Wu T, Song H, Ma Z, Xu J, Chen K - Nanoscale Res Lett (2015)

Bottom Line: We fabricated more isolated silicon nanowires with the diluted etching solution.And the J sc of the hybrid solar cell with more isolated nanowires has a significant enhancement, from 30.1 to 33.2 mA/cm(2).The remarkable EQE in the wavelength region of 300 and 600 nm was also obtained, which are in excess of 80 %.

View Article: PubMed Central - PubMed

Affiliation: School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures of National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.

ABSTRACT
We report herein on the effects of silicon nanowire with different morphology on the device performance of n-SiNW/PEDOT:PSS hybrid solar cells. The power conversion efficiency (PCE) and external quantum efficiency (EQE) of the SiNW/PEDOT:PSS hybrid solar cells can be optimized by varying the length of the silicon nanowires. The optimal length of silicon nanowires is 0.23 μm, and the hybrid solar cell with the optimal length has the V oc of 569 mV, J sc of 30.1 mA/cm(2), and PCE of 9.3 %. We fabricated more isolated silicon nanowires with the diluted etching solution. And the J sc of the hybrid solar cell with more isolated nanowires has a significant enhancement, from 30.1 to 33.2 mA/cm(2). The remarkable EQE in the wavelength region of 300 and 600 nm was also obtained, which are in excess of 80 %. Our work provides a simple method to substantially improve the EQE of hybrid solar cell in the short wavelength region.

No MeSH data available.


a The dark current density-voltage (J–V) characteristics of the silicon nanowire hybrid solar cells and b the corresponding values of the ideality factor which is fitted by the dark J–V curves of the devices
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Fig5: a The dark current density-voltage (J–V) characteristics of the silicon nanowire hybrid solar cells and b the corresponding values of the ideality factor which is fitted by the dark J–V curves of the devices

Mentions: To further investigate the effect of different length silicon nanowire arrays, we also measured the dark current J–V characteristics of the hybrid solar cells, which are shown in Fig. 5a. The dark J–V curves of all the samples exhibit rectification characteristic. The J–V characteristic of the Schottky junction can be expressed by the thermionic emission model by Eq. 1,Fig. 5


Substantial Improvement of Short Wavelength Response in n-SiNW/PEDOT:PSS Solar Cell.

Ge Z, Xu L, Cao Y, Wu T, Song H, Ma Z, Xu J, Chen K - Nanoscale Res Lett (2015)

a The dark current density-voltage (J–V) characteristics of the silicon nanowire hybrid solar cells and b the corresponding values of the ideality factor which is fitted by the dark J–V curves of the devices
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4539312&req=5

Fig5: a The dark current density-voltage (J–V) characteristics of the silicon nanowire hybrid solar cells and b the corresponding values of the ideality factor which is fitted by the dark J–V curves of the devices
Mentions: To further investigate the effect of different length silicon nanowire arrays, we also measured the dark current J–V characteristics of the hybrid solar cells, which are shown in Fig. 5a. The dark J–V curves of all the samples exhibit rectification characteristic. The J–V characteristic of the Schottky junction can be expressed by the thermionic emission model by Eq. 1,Fig. 5

Bottom Line: We fabricated more isolated silicon nanowires with the diluted etching solution.And the J sc of the hybrid solar cell with more isolated nanowires has a significant enhancement, from 30.1 to 33.2 mA/cm(2).The remarkable EQE in the wavelength region of 300 and 600 nm was also obtained, which are in excess of 80 %.

View Article: PubMed Central - PubMed

Affiliation: School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures of National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.

ABSTRACT
We report herein on the effects of silicon nanowire with different morphology on the device performance of n-SiNW/PEDOT:PSS hybrid solar cells. The power conversion efficiency (PCE) and external quantum efficiency (EQE) of the SiNW/PEDOT:PSS hybrid solar cells can be optimized by varying the length of the silicon nanowires. The optimal length of silicon nanowires is 0.23 μm, and the hybrid solar cell with the optimal length has the V oc of 569 mV, J sc of 30.1 mA/cm(2), and PCE of 9.3 %. We fabricated more isolated silicon nanowires with the diluted etching solution. And the J sc of the hybrid solar cell with more isolated nanowires has a significant enhancement, from 30.1 to 33.2 mA/cm(2). The remarkable EQE in the wavelength region of 300 and 600 nm was also obtained, which are in excess of 80 %. Our work provides a simple method to substantially improve the EQE of hybrid solar cell in the short wavelength region.

No MeSH data available.