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Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications.

Heo K, Lee H, Jian J, Lee DJ, Park Y, Lee C, Lee BY, Hong S - Nanoscale Res Lett (2015)

Bottom Line: As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors.The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector.Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Republic of Korea, kheo@sejong.ac.kr.

ABSTRACT
We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. We demonstrated that diverse nanostructures can be grown depending on the combination of the Bi powder and film catalysts. As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors. The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector. Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

No MeSH data available.


Photoresponse characteristics of devices based on a single CdTe NW or CdTe/CdS hierarchical nanostructures. aI-V characteristics of a photodetector based on a single CdTe NW with (red) or without (black) white light illumination. b Single modulation cycle of the photodetector based on CdTe NW exposed to a white light of 100 mW/cm2 at a bias voltage of 1 V. cI-V characteristics of a photodetector based on CdTe/CdS hierarchical nanostructures with (red) or without (black) a white light illumination. d Relative responsivity of a photodetector based on CdTe/CdS hierarchical nanostructures. The inset shows the spectral response of the CdTe/CdS hierarchical nanostructure device measured at a bias voltage of 1 V
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Fig4: Photoresponse characteristics of devices based on a single CdTe NW or CdTe/CdS hierarchical nanostructures. aI-V characteristics of a photodetector based on a single CdTe NW with (red) or without (black) white light illumination. b Single modulation cycle of the photodetector based on CdTe NW exposed to a white light of 100 mW/cm2 at a bias voltage of 1 V. cI-V characteristics of a photodetector based on CdTe/CdS hierarchical nanostructures with (red) or without (black) a white light illumination. d Relative responsivity of a photodetector based on CdTe/CdS hierarchical nanostructures. The inset shows the spectral response of the CdTe/CdS hierarchical nanostructure device measured at a bias voltage of 1 V

Mentions: Figure 4a, b shows the photoresponse characteristics of a photodetector based on a single CdTe NW. The fabrication process is shown in the “Methods” section. The channel length of the NW junction is 4 μm as shown in the inset image of Fig. 4a. The metal electrodes consist of Au and Ti (60 nm/10 nm). Figure 4a shows the I-V curve of the CdTe NW photodetector with and without light illumination. Here, Ilight and Idark represent the currents with and without the light source, respectively. For the photocurrent measurement, we utilized a solar simulator (Newport 91160A) as a light source. This light source had a white light spectrum with a power density of 100 mW/cm2 (AM 1.5). Optical power filters were utilized to control the intensity of the light from the solar simulator. The measured photocurrent Ip, defined as Ilight − Idark, was 1.71 and 0.94 μA at the bias voltage of −1.0 and +1.0 V, respectively. The asymmetrical photocurrent behavior is probably due to defects or impurities which can generate an intrinsic potential difference between two metal electrodes [29].Fig. 4


Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications.

Heo K, Lee H, Jian J, Lee DJ, Park Y, Lee C, Lee BY, Hong S - Nanoscale Res Lett (2015)

Photoresponse characteristics of devices based on a single CdTe NW or CdTe/CdS hierarchical nanostructures. aI-V characteristics of a photodetector based on a single CdTe NW with (red) or without (black) white light illumination. b Single modulation cycle of the photodetector based on CdTe NW exposed to a white light of 100 mW/cm2 at a bias voltage of 1 V. cI-V characteristics of a photodetector based on CdTe/CdS hierarchical nanostructures with (red) or without (black) a white light illumination. d Relative responsivity of a photodetector based on CdTe/CdS hierarchical nanostructures. The inset shows the spectral response of the CdTe/CdS hierarchical nanostructure device measured at a bias voltage of 1 V
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Fig4: Photoresponse characteristics of devices based on a single CdTe NW or CdTe/CdS hierarchical nanostructures. aI-V characteristics of a photodetector based on a single CdTe NW with (red) or without (black) white light illumination. b Single modulation cycle of the photodetector based on CdTe NW exposed to a white light of 100 mW/cm2 at a bias voltage of 1 V. cI-V characteristics of a photodetector based on CdTe/CdS hierarchical nanostructures with (red) or without (black) a white light illumination. d Relative responsivity of a photodetector based on CdTe/CdS hierarchical nanostructures. The inset shows the spectral response of the CdTe/CdS hierarchical nanostructure device measured at a bias voltage of 1 V
Mentions: Figure 4a, b shows the photoresponse characteristics of a photodetector based on a single CdTe NW. The fabrication process is shown in the “Methods” section. The channel length of the NW junction is 4 μm as shown in the inset image of Fig. 4a. The metal electrodes consist of Au and Ti (60 nm/10 nm). Figure 4a shows the I-V curve of the CdTe NW photodetector with and without light illumination. Here, Ilight and Idark represent the currents with and without the light source, respectively. For the photocurrent measurement, we utilized a solar simulator (Newport 91160A) as a light source. This light source had a white light spectrum with a power density of 100 mW/cm2 (AM 1.5). Optical power filters were utilized to control the intensity of the light from the solar simulator. The measured photocurrent Ip, defined as Ilight − Idark, was 1.71 and 0.94 μA at the bias voltage of −1.0 and +1.0 V, respectively. The asymmetrical photocurrent behavior is probably due to defects or impurities which can generate an intrinsic potential difference between two metal electrodes [29].Fig. 4

Bottom Line: As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors.The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector.Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Republic of Korea, kheo@sejong.ac.kr.

ABSTRACT
We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. We demonstrated that diverse nanostructures can be grown depending on the combination of the Bi powder and film catalysts. As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors. The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector. Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

No MeSH data available.