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Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications.

Heo K, Lee H, Jian J, Lee DJ, Park Y, Lee C, Lee BY, Hong S - Nanoscale Res Lett (2015)

Bottom Line: As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors.The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector.Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Republic of Korea, kheo@sejong.ac.kr.

ABSTRACT
We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. We demonstrated that diverse nanostructures can be grown depending on the combination of the Bi powder and film catalysts. As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors. The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector. Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

No MeSH data available.


Structural control of CdTe nanostructures. a CdTe film grown on a Bi-coated film. b Bi-assisted CdTe film grown on a Bi-coated film. c Bi-assisted CdTe NWs grown on a Au-coated film at 460 °C. d Bi-assisted CdTe NWs grown on a Au-coated film at 540 °C. e CdTe NWs grown on a Au-coated film. f Average lengths of CdTe NWs grown at different conditions. g TEM images of CdTe NWs. The right-hand image shows a magnified TEM image measured on a single CdTe NW. The upper inset shows the diffraction pattern of the CdTe NW. h EDS measurement of as-grown CdTe NWs
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Fig2: Structural control of CdTe nanostructures. a CdTe film grown on a Bi-coated film. b Bi-assisted CdTe film grown on a Bi-coated film. c Bi-assisted CdTe NWs grown on a Au-coated film at 460 °C. d Bi-assisted CdTe NWs grown on a Au-coated film at 540 °C. e CdTe NWs grown on a Au-coated film. f Average lengths of CdTe NWs grown at different conditions. g TEM images of CdTe NWs. The right-hand image shows a magnified TEM image measured on a single CdTe NW. The upper inset shows the diffraction pattern of the CdTe NW. h EDS measurement of as-grown CdTe NWs

Mentions: Figure 2a–e shows the scanning electron microscopy (SEM) images of various CdTe nanostructures grown under different growth conditions. First, when we used a pure CdTe powder source and Bi film catalyst to grow the nanostructures, we obtained a CdTe thin film on the substrate as shown in Fig. 2a. On the other hand, when we adopted a mixed powder source including both CdTe and Bi (10:1 weight ratio), we obtained CdTe NWs (Fig. 2b).Fig. 2


Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications.

Heo K, Lee H, Jian J, Lee DJ, Park Y, Lee C, Lee BY, Hong S - Nanoscale Res Lett (2015)

Structural control of CdTe nanostructures. a CdTe film grown on a Bi-coated film. b Bi-assisted CdTe film grown on a Bi-coated film. c Bi-assisted CdTe NWs grown on a Au-coated film at 460 °C. d Bi-assisted CdTe NWs grown on a Au-coated film at 540 °C. e CdTe NWs grown on a Au-coated film. f Average lengths of CdTe NWs grown at different conditions. g TEM images of CdTe NWs. The right-hand image shows a magnified TEM image measured on a single CdTe NW. The upper inset shows the diffraction pattern of the CdTe NW. h EDS measurement of as-grown CdTe NWs
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

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Fig2: Structural control of CdTe nanostructures. a CdTe film grown on a Bi-coated film. b Bi-assisted CdTe film grown on a Bi-coated film. c Bi-assisted CdTe NWs grown on a Au-coated film at 460 °C. d Bi-assisted CdTe NWs grown on a Au-coated film at 540 °C. e CdTe NWs grown on a Au-coated film. f Average lengths of CdTe NWs grown at different conditions. g TEM images of CdTe NWs. The right-hand image shows a magnified TEM image measured on a single CdTe NW. The upper inset shows the diffraction pattern of the CdTe NW. h EDS measurement of as-grown CdTe NWs
Mentions: Figure 2a–e shows the scanning electron microscopy (SEM) images of various CdTe nanostructures grown under different growth conditions. First, when we used a pure CdTe powder source and Bi film catalyst to grow the nanostructures, we obtained a CdTe thin film on the substrate as shown in Fig. 2a. On the other hand, when we adopted a mixed powder source including both CdTe and Bi (10:1 weight ratio), we obtained CdTe NWs (Fig. 2b).Fig. 2

Bottom Line: As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors.The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector.Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Republic of Korea, kheo@sejong.ac.kr.

ABSTRACT
We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. We demonstrated that diverse nanostructures can be grown depending on the combination of the Bi powder and film catalysts. As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors. The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector. Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

No MeSH data available.