Limits...
Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications.

Heo K, Lee H, Jian J, Lee DJ, Park Y, Lee C, Lee BY, Hong S - Nanoscale Res Lett (2015)

Bottom Line: As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors.The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector.Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Republic of Korea, kheo@sejong.ac.kr.

ABSTRACT
We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. We demonstrated that diverse nanostructures can be grown depending on the combination of the Bi powder and film catalysts. As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors. The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector. Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

No MeSH data available.


Schematic diagrams depicting the growth process of CdTe nanostructures. a Bi-assisted CdTe nanostructure growth by a CVD method. b Growth of CdTe/CdS hierarchical nanostructures
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4539310&req=5

Fig1: Schematic diagrams depicting the growth process of CdTe nanostructures. a Bi-assisted CdTe nanostructure growth by a CVD method. b Growth of CdTe/CdS hierarchical nanostructures

Mentions: Figure 1a shows the schematic diagram depicting the method to grow CdTe NWs. The NWs were grown in a horizontal tube furnace via a vapor-liquid-solid (VLS) process. In brief, CdTe powder was mixed with Bi powder in a 10:1 weight ratio. The mixed powder was placed at the center of an alumina tube furnace as a source material, while an 8-nm-thick Au or Bi film-coated SiO2 substrate was placed at the downstream position of the source material. For the growth of the CdTe NWs, the furnace tube was rapidly heated up to a target temperature of 460~540 °C at a rate of 32.5 °C/min under a constant Ar flow. When the temperature reached the target temperature, the furnace tube was evacuated to a base pressure of 8 × 10−3 Torr. Then, the furnace tube was kept at a constant temperature and pressure condition for a controlled time (90~120 min). At the end of the growth process, the tube was thoroughly purged with a constant Ar flow and cooled down slowly.Fig. 1


Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications.

Heo K, Lee H, Jian J, Lee DJ, Park Y, Lee C, Lee BY, Hong S - Nanoscale Res Lett (2015)

Schematic diagrams depicting the growth process of CdTe nanostructures. a Bi-assisted CdTe nanostructure growth by a CVD method. b Growth of CdTe/CdS hierarchical nanostructures
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4539310&req=5

Fig1: Schematic diagrams depicting the growth process of CdTe nanostructures. a Bi-assisted CdTe nanostructure growth by a CVD method. b Growth of CdTe/CdS hierarchical nanostructures
Mentions: Figure 1a shows the schematic diagram depicting the method to grow CdTe NWs. The NWs were grown in a horizontal tube furnace via a vapor-liquid-solid (VLS) process. In brief, CdTe powder was mixed with Bi powder in a 10:1 weight ratio. The mixed powder was placed at the center of an alumina tube furnace as a source material, while an 8-nm-thick Au or Bi film-coated SiO2 substrate was placed at the downstream position of the source material. For the growth of the CdTe NWs, the furnace tube was rapidly heated up to a target temperature of 460~540 °C at a rate of 32.5 °C/min under a constant Ar flow. When the temperature reached the target temperature, the furnace tube was evacuated to a base pressure of 8 × 10−3 Torr. Then, the furnace tube was kept at a constant temperature and pressure condition for a controlled time (90~120 min). At the end of the growth process, the tube was thoroughly purged with a constant Ar flow and cooled down slowly.Fig. 1

Bottom Line: As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors.The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector.Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Republic of Korea, kheo@sejong.ac.kr.

ABSTRACT
We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. We demonstrated that diverse nanostructures can be grown depending on the combination of the Bi powder and film catalysts. As a proof of concepts, we grew CdTe/CdS branched nanowires for the fabrication of photodetectors. The hierarchical nanostructure-based photodetectors showed an improved photoresponsivity compared to the single CdTe nanowire (NW)-based photodetector. Our strategy can be a simple but powerful method for the development of advanced optoelectronic devices and other practical applications.

No MeSH data available.