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Germanium-Vacancy Single Color Centers in Diamond.

Iwasaki T, Ishibashi F, Miyamoto Y, Doi Y, Kobayashi S, Miyazaki T, Tahara K, Jahnke KD, Rogers LJ, Naydenov B, Jelezko F, Yamasaki S, Nagamachi S, Inubushi T, Mizuochi N, Hatano M - Sci Rep (2015)

Bottom Line: We demonstrate this new color center works as a single photon source.Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond.A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

View Article: PubMed Central - PubMed

Affiliation: 1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [2] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo.

ABSTRACT
Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

No MeSH data available.


MPCVD-incorporated GeV color center ensemble.(a) PL spectrum from the MPCVD-incorporated GeV centers, compared with ones fabricated by ion implantation. (b) Histograms of the ZPL position of the GeV centers fabricated by MPCVD and ion implantation.
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f4: MPCVD-incorporated GeV color center ensemble.(a) PL spectrum from the MPCVD-incorporated GeV centers, compared with ones fabricated by ion implantation. (b) Histograms of the ZPL position of the GeV centers fabricated by MPCVD and ion implantation.

Mentions: CVD incorporation of color centers is an important technique to obtain high-quality fluorescence centers in diamond without implantation damages101718. Here, we demonstrate the formation of GeV color centers in diamond by microwave plasma CVD (MPCVD). A diamond film was grown on a single-crystal diamond substrate by MPCVD with a Ge solid source. The Ge incorporation in the diamond film was confirmed by secondary ion mass spectrometry (SIMS) (see Supplementary Information Fig. S4). Figure 4a shows a PL spectrum from the CVD-incorporated GeV centers, possessing a narrower line width of 4–5 nm than that (6–7 nm) of the GeV centers formed by ion implantation and annealing. Histograms of the ZPL position for GeV centers in the MPCVD and ion implantation samples are shown in Fig. 4b, and there is a slight blue-shift in the MPCVD sample. The CVD-prepared GeV centers also have a narrower inhomogeneous distribution (σ = 0.05 nm) than those produced by ion implantation (σ = 0.18 nm). These effects could arise from the lower defect density and lower strain in the sample prepared by MPCVD.


Germanium-Vacancy Single Color Centers in Diamond.

Iwasaki T, Ishibashi F, Miyamoto Y, Doi Y, Kobayashi S, Miyazaki T, Tahara K, Jahnke KD, Rogers LJ, Naydenov B, Jelezko F, Yamasaki S, Nagamachi S, Inubushi T, Mizuochi N, Hatano M - Sci Rep (2015)

MPCVD-incorporated GeV color center ensemble.(a) PL spectrum from the MPCVD-incorporated GeV centers, compared with ones fabricated by ion implantation. (b) Histograms of the ZPL position of the GeV centers fabricated by MPCVD and ion implantation.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4528202&req=5

f4: MPCVD-incorporated GeV color center ensemble.(a) PL spectrum from the MPCVD-incorporated GeV centers, compared with ones fabricated by ion implantation. (b) Histograms of the ZPL position of the GeV centers fabricated by MPCVD and ion implantation.
Mentions: CVD incorporation of color centers is an important technique to obtain high-quality fluorescence centers in diamond without implantation damages101718. Here, we demonstrate the formation of GeV color centers in diamond by microwave plasma CVD (MPCVD). A diamond film was grown on a single-crystal diamond substrate by MPCVD with a Ge solid source. The Ge incorporation in the diamond film was confirmed by secondary ion mass spectrometry (SIMS) (see Supplementary Information Fig. S4). Figure 4a shows a PL spectrum from the CVD-incorporated GeV centers, possessing a narrower line width of 4–5 nm than that (6–7 nm) of the GeV centers formed by ion implantation and annealing. Histograms of the ZPL position for GeV centers in the MPCVD and ion implantation samples are shown in Fig. 4b, and there is a slight blue-shift in the MPCVD sample. The CVD-prepared GeV centers also have a narrower inhomogeneous distribution (σ = 0.05 nm) than those produced by ion implantation (σ = 0.18 nm). These effects could arise from the lower defect density and lower strain in the sample prepared by MPCVD.

Bottom Line: We demonstrate this new color center works as a single photon source.Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond.A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

View Article: PubMed Central - PubMed

Affiliation: 1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [2] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo.

ABSTRACT
Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

No MeSH data available.