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Germanium-Vacancy Single Color Centers in Diamond.

Iwasaki T, Ishibashi F, Miyamoto Y, Doi Y, Kobayashi S, Miyazaki T, Tahara K, Jahnke KD, Rogers LJ, Naydenov B, Jelezko F, Yamasaki S, Nagamachi S, Inubushi T, Mizuochi N, Hatano M - Sci Rep (2015)

Bottom Line: We demonstrate this new color center works as a single photon source.Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond.A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

View Article: PubMed Central - PubMed

Affiliation: 1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [2] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo.

ABSTRACT
Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

No MeSH data available.


Related in: MedlinePlus

Luminescence characteristics of GeV color center in diamond formed by ion implantation.(a) PL spectra from a Ge ion implanted diamond at 300 K and 10 K. The inset shows ZPL at both the temperatures. (b) Intensity mapping of the ZPL between 595 and 608 nm at room temperature. The Ge ions were implanted to give a peak concentration of 1 × 1019 cm−3. The ion implantation conditions were determined by simulating SRIM14. The measurements were done by using a micro-Raman system at 300 K and a micro-PL system at 10 K.
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f1: Luminescence characteristics of GeV color center in diamond formed by ion implantation.(a) PL spectra from a Ge ion implanted diamond at 300 K and 10 K. The inset shows ZPL at both the temperatures. (b) Intensity mapping of the ZPL between 595 and 608 nm at room temperature. The Ge ions were implanted to give a peak concentration of 1 × 1019 cm−3. The ion implantation conditions were determined by simulating SRIM14. The measurements were done by using a micro-Raman system at 300 K and a micro-PL system at 10 K.

Mentions: Figure 1a shows a PL spectrum from a Ge ion-implanted diamond at room temperature. A peak was found at 602.7 nm (~2.06 eV), accompanying a Raman scattering peak from the diamond substrate. We confirmed that the peak appeared over the whole substrate surface although the intensity varied (Fig. 1b) and that the peak intensity increased with increasing the Ge ion implantation dose (see Supplementary Information Fig. S1). It should be noted that this peak was not observed by ion implantation of different elements (see Supplementary Information Fig. S2). Thus, the peak at 602 nm was concluded to be the ZPL of the Ge-related structure in diamond. The full width at half maximum (FWHM) of the peak decreased at 10 K, where the ZPL splits into two components with an energy separation of 0.67 meV (inset in Fig. 1a). Other lines seem to appear around the two peaks, but a more detailed study would be necessary to determine the fine structure. This luminescence band was only visible after the high-temperature treatment at 800 °C and above. Ge ion implantation alone did not lead to the appearance of the peaks (see Supplementary Information Fig. S3). This fact indicates that the Ge forms a complex in diamond with a vacancy or vacancies diffusing during the high temperature annealing process, like other color centers related to vacancies4.


Germanium-Vacancy Single Color Centers in Diamond.

Iwasaki T, Ishibashi F, Miyamoto Y, Doi Y, Kobayashi S, Miyazaki T, Tahara K, Jahnke KD, Rogers LJ, Naydenov B, Jelezko F, Yamasaki S, Nagamachi S, Inubushi T, Mizuochi N, Hatano M - Sci Rep (2015)

Luminescence characteristics of GeV color center in diamond formed by ion implantation.(a) PL spectra from a Ge ion implanted diamond at 300 K and 10 K. The inset shows ZPL at both the temperatures. (b) Intensity mapping of the ZPL between 595 and 608 nm at room temperature. The Ge ions were implanted to give a peak concentration of 1 × 1019 cm−3. The ion implantation conditions were determined by simulating SRIM14. The measurements were done by using a micro-Raman system at 300 K and a micro-PL system at 10 K.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4528202&req=5

f1: Luminescence characteristics of GeV color center in diamond formed by ion implantation.(a) PL spectra from a Ge ion implanted diamond at 300 K and 10 K. The inset shows ZPL at both the temperatures. (b) Intensity mapping of the ZPL between 595 and 608 nm at room temperature. The Ge ions were implanted to give a peak concentration of 1 × 1019 cm−3. The ion implantation conditions were determined by simulating SRIM14. The measurements were done by using a micro-Raman system at 300 K and a micro-PL system at 10 K.
Mentions: Figure 1a shows a PL spectrum from a Ge ion-implanted diamond at room temperature. A peak was found at 602.7 nm (~2.06 eV), accompanying a Raman scattering peak from the diamond substrate. We confirmed that the peak appeared over the whole substrate surface although the intensity varied (Fig. 1b) and that the peak intensity increased with increasing the Ge ion implantation dose (see Supplementary Information Fig. S1). It should be noted that this peak was not observed by ion implantation of different elements (see Supplementary Information Fig. S2). Thus, the peak at 602 nm was concluded to be the ZPL of the Ge-related structure in diamond. The full width at half maximum (FWHM) of the peak decreased at 10 K, where the ZPL splits into two components with an energy separation of 0.67 meV (inset in Fig. 1a). Other lines seem to appear around the two peaks, but a more detailed study would be necessary to determine the fine structure. This luminescence band was only visible after the high-temperature treatment at 800 °C and above. Ge ion implantation alone did not lead to the appearance of the peaks (see Supplementary Information Fig. S3). This fact indicates that the Ge forms a complex in diamond with a vacancy or vacancies diffusing during the high temperature annealing process, like other color centers related to vacancies4.

Bottom Line: We demonstrate this new color center works as a single photon source.Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond.A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

View Article: PubMed Central - PubMed

Affiliation: 1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [2] CREST, Japan Science and Technology Agency, Chiyoda, Tokyo.

ABSTRACT
Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

No MeSH data available.


Related in: MedlinePlus