Limits...
One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti 0.48)O 3 Nanodot Arrays.

Zhang X, Kang M, Huang K, Zhang F, Lin S, Gao X, Lu X, Zhang Z, Liu J - Nanoscale Res Lett (2015)

Bottom Line: Therefore, the presented strategy is relatively simple and economical.X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase.Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties.

View Article: PubMed Central - PubMed

Affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China, xiaoyanzhang001@yeah.net.

ABSTRACT
In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).

No MeSH data available.


Piezoresponse images for the polarization reversal process in the nanodot arrays. a Topological, in which the blue line represents the AFM cross-sectional height data along the scanned red line. b Piezoresponse amplitude and c phase micrograph of the PZT nanodot arrays on a Pt/Si substrate in the same selected area
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License 1 - License 2
getmorefigures.php?uid=PMC4527975&req=5

Fig3: Piezoresponse images for the polarization reversal process in the nanodot arrays. a Topological, in which the blue line represents the AFM cross-sectional height data along the scanned red line. b Piezoresponse amplitude and c phase micrograph of the PZT nanodot arrays on a Pt/Si substrate in the same selected area

Mentions: To characterize the ferroelectric properties of the ordered PZT nanodot arrays, vertical piezoresponse force microscopy (VPFM) measurements were performed and demonstrated in Fig. 3, including the AFM topography, piezoresponse amplitude, and phase micrograph. The surface topology of the PZT nanodot arrays (shown in Fig. 3a) exhibited a uniform height and well-aligned ordering. The blue line in Fig. 3a represented the AFM cross-sectional height data along the scanned red line on the PZT nanodot arrays. The average height of PZT nanodot was about 100 nm. The contrasts in amplitude piezoresponse (Fig. 3b) represent the magnitudes of the piezoelectric signals, which are much higher on the nanodots. The dark and bright areas in the phase micrograph (Fig. 3c) correspond to the up-polarization and down-polarization states, respectively, indicating the well-defined piezoresponse of the ordered PZT nanodot arrays.Fig. 3


One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti 0.48)O 3 Nanodot Arrays.

Zhang X, Kang M, Huang K, Zhang F, Lin S, Gao X, Lu X, Zhang Z, Liu J - Nanoscale Res Lett (2015)

Piezoresponse images for the polarization reversal process in the nanodot arrays. a Topological, in which the blue line represents the AFM cross-sectional height data along the scanned red line. b Piezoresponse amplitude and c phase micrograph of the PZT nanodot arrays on a Pt/Si substrate in the same selected area
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC4527975&req=5

Fig3: Piezoresponse images for the polarization reversal process in the nanodot arrays. a Topological, in which the blue line represents the AFM cross-sectional height data along the scanned red line. b Piezoresponse amplitude and c phase micrograph of the PZT nanodot arrays on a Pt/Si substrate in the same selected area
Mentions: To characterize the ferroelectric properties of the ordered PZT nanodot arrays, vertical piezoresponse force microscopy (VPFM) measurements were performed and demonstrated in Fig. 3, including the AFM topography, piezoresponse amplitude, and phase micrograph. The surface topology of the PZT nanodot arrays (shown in Fig. 3a) exhibited a uniform height and well-aligned ordering. The blue line in Fig. 3a represented the AFM cross-sectional height data along the scanned red line on the PZT nanodot arrays. The average height of PZT nanodot was about 100 nm. The contrasts in amplitude piezoresponse (Fig. 3b) represent the magnitudes of the piezoelectric signals, which are much higher on the nanodots. The dark and bright areas in the phase micrograph (Fig. 3c) correspond to the up-polarization and down-polarization states, respectively, indicating the well-defined piezoresponse of the ordered PZT nanodot arrays.Fig. 3

Bottom Line: Therefore, the presented strategy is relatively simple and economical.X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase.Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties.

View Article: PubMed Central - PubMed

Affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China, xiaoyanzhang001@yeah.net.

ABSTRACT
In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).

No MeSH data available.