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Electrical, structural, and optical properties of sulfurized Sn-doped In2O 3 nanowires.

Zervos M, Mihailescu CN, Giapintzakis J, Othonos A, Travlos A, Luculescu CR - Nanoscale Res Lett (2015)

Bottom Line: We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C.The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In2O3.In contrast, Sn:In2O3 nanowires grown on glass at 500 °C can be treated under H2S only below 200 °C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.

View Article: PubMed Central - PubMed

Affiliation: Nanostructured Materials and Devices Laboratory, Department of Mechanical and Manufacturing Engineering, P.O. Box 20537, Nicosia, 1678, Cyprus, zervos@ucy.ac.cy.

ABSTRACT
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In2O3. In contrast, Sn:In2O3 nanowires grown on glass at 500 °C can be treated under H2S only below 200 °C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.

No MeSH data available.


a GIXD diffraction pattern of Sn:In2O3 NWs containing <1 % Sn, 2 % Sn, and 4 % Sn that were exposed to H2S at 300 °C for 60 min. The peaks have been labeled with increasing angle in ascending order as follows  and b GIXD diffraction pattern of Sn:In2O3 NWs containing 2 % Sn and 4 % Sn that were exposed to H2S at 400 °C for 30 min  The diffracted peaks are labeled by  in ascending order and increasing angle
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Fig2: a GIXD diffraction pattern of Sn:In2O3 NWs containing <1 % Sn, 2 % Sn, and 4 % Sn that were exposed to H2S at 300 °C for 60 min. The peaks have been labeled with increasing angle in ascending order as follows and b GIXD diffraction pattern of Sn:In2O3 NWs containing 2 % Sn and 4 % Sn that were exposed to H2S at 400 °C for 30 min The diffracted peaks are labeled by in ascending order and increasing angle

Mentions: We consider next the structural, electrical, and optical properties of the Sn-doped In2O3 NWs treated under H2S between 300 to 600 °C. It is well known that H2S undergoes complete decomposition on the surface of oxides even at room temperature and the S atoms bond to the metal cations of the surface. The ionic radii of O2− and S2− are 1.32 and 1.82 Å, respectively, so we expect that S2− will substitute O2− or fill in vacancies. We find that the Sn-doped In2O3 NWs processed under H2S at 300 °C consist mainly of cubic bixbyite In2O3, tetragonal rutile SnO2, and hexagonal SnS2 as shown by the GIXD in Fig. 2a where the peaks have been identified according to ICDD 01-071-5323 for SnO2, ICDD 00-023-0677 for SnS2, and ICDD 04-012-5550 for In2O3. More specifically, we find that the Sn-doped In2O3 NWs with 1–2 % Sn are converted into SnS2/In2O3 NWs at 300 °C while we observe SnO2, SnS2, and the dominant cubic bixbyite In2O3 after exposing the Sn-doped In2O3 NWs containing 4 % Sn to H2S at 300 °C also shown in Fig. 2a. A typical EDX spectrum of the Sn-doped In2O3 NWs processed under H2S at 400 °C confirming the presence of In, Sn, and S is shown as an inset in Fig. 3.Fig. 2


Electrical, structural, and optical properties of sulfurized Sn-doped In2O 3 nanowires.

Zervos M, Mihailescu CN, Giapintzakis J, Othonos A, Travlos A, Luculescu CR - Nanoscale Res Lett (2015)

a GIXD diffraction pattern of Sn:In2O3 NWs containing <1 % Sn, 2 % Sn, and 4 % Sn that were exposed to H2S at 300 °C for 60 min. The peaks have been labeled with increasing angle in ascending order as follows  and b GIXD diffraction pattern of Sn:In2O3 NWs containing 2 % Sn and 4 % Sn that were exposed to H2S at 400 °C for 30 min  The diffracted peaks are labeled by  in ascending order and increasing angle
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4522004&req=5

Fig2: a GIXD diffraction pattern of Sn:In2O3 NWs containing <1 % Sn, 2 % Sn, and 4 % Sn that were exposed to H2S at 300 °C for 60 min. The peaks have been labeled with increasing angle in ascending order as follows and b GIXD diffraction pattern of Sn:In2O3 NWs containing 2 % Sn and 4 % Sn that were exposed to H2S at 400 °C for 30 min The diffracted peaks are labeled by in ascending order and increasing angle
Mentions: We consider next the structural, electrical, and optical properties of the Sn-doped In2O3 NWs treated under H2S between 300 to 600 °C. It is well known that H2S undergoes complete decomposition on the surface of oxides even at room temperature and the S atoms bond to the metal cations of the surface. The ionic radii of O2− and S2− are 1.32 and 1.82 Å, respectively, so we expect that S2− will substitute O2− or fill in vacancies. We find that the Sn-doped In2O3 NWs processed under H2S at 300 °C consist mainly of cubic bixbyite In2O3, tetragonal rutile SnO2, and hexagonal SnS2 as shown by the GIXD in Fig. 2a where the peaks have been identified according to ICDD 01-071-5323 for SnO2, ICDD 00-023-0677 for SnS2, and ICDD 04-012-5550 for In2O3. More specifically, we find that the Sn-doped In2O3 NWs with 1–2 % Sn are converted into SnS2/In2O3 NWs at 300 °C while we observe SnO2, SnS2, and the dominant cubic bixbyite In2O3 after exposing the Sn-doped In2O3 NWs containing 4 % Sn to H2S at 300 °C also shown in Fig. 2a. A typical EDX spectrum of the Sn-doped In2O3 NWs processed under H2S at 400 °C confirming the presence of In, Sn, and S is shown as an inset in Fig. 3.Fig. 2

Bottom Line: We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C.The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In2O3.In contrast, Sn:In2O3 nanowires grown on glass at 500 °C can be treated under H2S only below 200 °C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.

View Article: PubMed Central - PubMed

Affiliation: Nanostructured Materials and Devices Laboratory, Department of Mechanical and Manufacturing Engineering, P.O. Box 20537, Nicosia, 1678, Cyprus, zervos@ucy.ac.cy.

ABSTRACT
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In2O3. In contrast, Sn:In2O3 nanowires grown on glass at 500 °C can be treated under H2S only below 200 °C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.

No MeSH data available.