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Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Ramadan KS, Evoy S - PLoS ONE (2015)

Bottom Line: The effect of sputtering parameters on film properties was assessed.Films grown onto Al/0.32Mo however featured improved surface roughness.Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Alberta, 9211-116th St, Edmonton, Alberta, T6G 2V4, Canada.

ABSTRACT
Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

No MeSH data available.


SEM images of Al-AlN-Al/0.32Mo capacitors fabricated using a lift-off process.(a) Overall picture showing square and circular capacitors with different sizes, (b) Close-up image of an edge of one of the capacitors showing the surfaces of the two different materials. (c) A higher magnification image showing the width of the thickness variation region caused by the lift-off process and the difference in roughness between Al and AlMo surfaces.
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pone.0133479.g011: SEM images of Al-AlN-Al/0.32Mo capacitors fabricated using a lift-off process.(a) Overall picture showing square and circular capacitors with different sizes, (b) Close-up image of an edge of one of the capacitors showing the surfaces of the two different materials. (c) A higher magnification image showing the width of the thickness variation region caused by the lift-off process and the difference in roughness between Al and AlMo surfaces.

Mentions: Use of a low-temperature process additionally brings about advantaged with respect to process compatibility. To demonstrate the advantage of low temperature deposition, a lift-off process of AlN c-axis oriented thin films was successfully carried out. Square and circular two plate capacitors of diameters ranging from 200μm to 1.4mm were fabricated. Scanning electron microscopy was used to investigate the resulting capacitors. Fig 11a shows an image of the various capacitors. A close-up image of the edge of one structure shows a variation in thickness across a ~3μm width. This thickness variation expected from the bi-layer lift-off process given the undercut area in the LOR-B resist. This large variation could be reduced by a better control of the undercut, or using a single resist for lift-off [36, 48]. XRD analysis was also carried out in the patterned capacitors to ensure the (002) preferential orientation of the AlN film. The XRD spectrum shown in Fig 12 depicts peaks related to the 3 layers involved (AlMo/AlN/Al). The result indicated a high (002) preferential orientation thanks to the low temperature deposition process.


Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Ramadan KS, Evoy S - PLoS ONE (2015)

SEM images of Al-AlN-Al/0.32Mo capacitors fabricated using a lift-off process.(a) Overall picture showing square and circular capacitors with different sizes, (b) Close-up image of an edge of one of the capacitors showing the surfaces of the two different materials. (c) A higher magnification image showing the width of the thickness variation region caused by the lift-off process and the difference in roughness between Al and AlMo surfaces.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4508053&req=5

pone.0133479.g011: SEM images of Al-AlN-Al/0.32Mo capacitors fabricated using a lift-off process.(a) Overall picture showing square and circular capacitors with different sizes, (b) Close-up image of an edge of one of the capacitors showing the surfaces of the two different materials. (c) A higher magnification image showing the width of the thickness variation region caused by the lift-off process and the difference in roughness between Al and AlMo surfaces.
Mentions: Use of a low-temperature process additionally brings about advantaged with respect to process compatibility. To demonstrate the advantage of low temperature deposition, a lift-off process of AlN c-axis oriented thin films was successfully carried out. Square and circular two plate capacitors of diameters ranging from 200μm to 1.4mm were fabricated. Scanning electron microscopy was used to investigate the resulting capacitors. Fig 11a shows an image of the various capacitors. A close-up image of the edge of one structure shows a variation in thickness across a ~3μm width. This thickness variation expected from the bi-layer lift-off process given the undercut area in the LOR-B resist. This large variation could be reduced by a better control of the undercut, or using a single resist for lift-off [36, 48]. XRD analysis was also carried out in the patterned capacitors to ensure the (002) preferential orientation of the AlN film. The XRD spectrum shown in Fig 12 depicts peaks related to the 3 layers involved (AlMo/AlN/Al). The result indicated a high (002) preferential orientation thanks to the low temperature deposition process.

Bottom Line: The effect of sputtering parameters on film properties was assessed.Films grown onto Al/0.32Mo however featured improved surface roughness.Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Alberta, 9211-116th St, Edmonton, Alberta, T6G 2V4, Canada.

ABSTRACT
Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

No MeSH data available.