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Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Ramadan KS, Evoy S - PLoS ONE (2015)

Bottom Line: The effect of sputtering parameters on film properties was assessed.Films grown onto Al/0.32Mo however featured improved surface roughness.Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Alberta, 9211-116th St, Edmonton, Alberta, T6G 2V4, Canada.

ABSTRACT
Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

No MeSH data available.


(Color Online) Sputtering power impact on AlN grown on AlMo.(a) shows X-ray diffraction spectra of deposited AlN thin films at room temperature, a sputtering pressure of 1mTorr and power of 50–300W. (b) and (c) show the FWHM of the rocking curve and the AlN residual stress as a function of sputtering power, respectively.
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pone.0133479.g006: (Color Online) Sputtering power impact on AlN grown on AlMo.(a) shows X-ray diffraction spectra of deposited AlN thin films at room temperature, a sputtering pressure of 1mTorr and power of 50–300W. (b) and (c) show the FWHM of the rocking curve and the AlN residual stress as a function of sputtering power, respectively.

Mentions: To optimize the residual stress, AlN thin films were prepared at a sputtering pressure of 1mTorr and four different sputtering powers of 50W, 100W, 200W and 300W, respectively. Fig 6 reports the c-axis quality and the residual stress of each film. Growth in the (002) direction is completely inhibited in favor of the (101) one at powers below 100W (Fig 6a). The mean free path of the ejected Al atoms remains greater than the substrate to target distance. As such, there should still be very low chance of atom collision at these pressures. The reduced (002) crystallographic orientation may alternatively be the result of the low power not supplying enough kinetic energy for the adsorbed atoms to properly rearrange in the (002) orientation [24]. Although the (002) peak intensity showed its highest value for AlN film deposited at 200W (Fig 6a), the FWHM of the rocking curve maintained the decreasing trend with increasing sputtering power (Fig 6b). The deviation in residual stress is very significant at the 50W sputtering power compared to higher powers, as indicated Fig 6c. Similar to the films deposited at a 4mTorr pressure, the low peak of (002) renders the measurement unreliable. The Flexus system thus becomes a more reliable tool for such stress assessment.


Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Ramadan KS, Evoy S - PLoS ONE (2015)

(Color Online) Sputtering power impact on AlN grown on AlMo.(a) shows X-ray diffraction spectra of deposited AlN thin films at room temperature, a sputtering pressure of 1mTorr and power of 50–300W. (b) and (c) show the FWHM of the rocking curve and the AlN residual stress as a function of sputtering power, respectively.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4508053&req=5

pone.0133479.g006: (Color Online) Sputtering power impact on AlN grown on AlMo.(a) shows X-ray diffraction spectra of deposited AlN thin films at room temperature, a sputtering pressure of 1mTorr and power of 50–300W. (b) and (c) show the FWHM of the rocking curve and the AlN residual stress as a function of sputtering power, respectively.
Mentions: To optimize the residual stress, AlN thin films were prepared at a sputtering pressure of 1mTorr and four different sputtering powers of 50W, 100W, 200W and 300W, respectively. Fig 6 reports the c-axis quality and the residual stress of each film. Growth in the (002) direction is completely inhibited in favor of the (101) one at powers below 100W (Fig 6a). The mean free path of the ejected Al atoms remains greater than the substrate to target distance. As such, there should still be very low chance of atom collision at these pressures. The reduced (002) crystallographic orientation may alternatively be the result of the low power not supplying enough kinetic energy for the adsorbed atoms to properly rearrange in the (002) orientation [24]. Although the (002) peak intensity showed its highest value for AlN film deposited at 200W (Fig 6a), the FWHM of the rocking curve maintained the decreasing trend with increasing sputtering power (Fig 6b). The deviation in residual stress is very significant at the 50W sputtering power compared to higher powers, as indicated Fig 6c. Similar to the films deposited at a 4mTorr pressure, the low peak of (002) renders the measurement unreliable. The Flexus system thus becomes a more reliable tool for such stress assessment.

Bottom Line: The effect of sputtering parameters on film properties was assessed.Films grown onto Al/0.32Mo however featured improved surface roughness.Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Alberta, 9211-116th St, Edmonton, Alberta, T6G 2V4, Canada.

ABSTRACT
Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

No MeSH data available.