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Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Ramadan KS, Evoy S - PLoS ONE (2015)

Bottom Line: The effect of sputtering parameters on film properties was assessed.Films grown onto Al/0.32Mo however featured improved surface roughness.Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Alberta, 9211-116th St, Edmonton, Alberta, T6G 2V4, Canada.

ABSTRACT
Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

No MeSH data available.


X-ray diffraction spectrum of Al/0.32Mo nanocomposite.
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pone.0133479.g002: X-ray diffraction spectrum of Al/0.32Mo nanocomposite.

Mentions: Understanding of the structural differences between the Al/0.32Mo nanocomposite and pure aluminum is critical in order to assess possible effect on AlN growth. Fig 2 shows the broad XRD peak of Al/0.32Mo at 2θ = 41° in addition to other minor broad peaks, which is a signature of AlMo at the 0.32 composition. This broad band is indicative of the amorphous-like nature of the Al/0.32Mo [48] and will overlay the main (002) and (101) peaks of AlN. Atomic force microscopy was used to investigate the surface of both seed layers (Fig 3). Those images confirm that the roughness of the pure aluminum is an order of magnitude higher than that of the Al/0.32Mo nanocomposite. The difference between our measured roughness and previously reported values [48] is attributed to the use of thinner films (~130nm) compared to the film thickness of ~1.5μm studied by Ophus et al.[48] The surface roughness of pure aluminum indeed increases with higher film thickness. Use of Al/0.32Mo metallic glasses for such a higher film thickness therefore showed a two orders magnitude improvement of smoothness over pure aluminum, compared to the one order of magnitude improvement observed here. Fig 3 also shows the smaller grain size of the Al/0.32Mo nanocomposite compared to that of pure aluminum. These two structural characteristics (nanocrystalline-amorphous phase and lower surface roughness) are expected to affect the properties of AlN grown on such seeds.


Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

Ramadan KS, Evoy S - PLoS ONE (2015)

X-ray diffraction spectrum of Al/0.32Mo nanocomposite.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4508053&req=5

pone.0133479.g002: X-ray diffraction spectrum of Al/0.32Mo nanocomposite.
Mentions: Understanding of the structural differences between the Al/0.32Mo nanocomposite and pure aluminum is critical in order to assess possible effect on AlN growth. Fig 2 shows the broad XRD peak of Al/0.32Mo at 2θ = 41° in addition to other minor broad peaks, which is a signature of AlMo at the 0.32 composition. This broad band is indicative of the amorphous-like nature of the Al/0.32Mo [48] and will overlay the main (002) and (101) peaks of AlN. Atomic force microscopy was used to investigate the surface of both seed layers (Fig 3). Those images confirm that the roughness of the pure aluminum is an order of magnitude higher than that of the Al/0.32Mo nanocomposite. The difference between our measured roughness and previously reported values [48] is attributed to the use of thinner films (~130nm) compared to the film thickness of ~1.5μm studied by Ophus et al.[48] The surface roughness of pure aluminum indeed increases with higher film thickness. Use of Al/0.32Mo metallic glasses for such a higher film thickness therefore showed a two orders magnitude improvement of smoothness over pure aluminum, compared to the one order of magnitude improvement observed here. Fig 3 also shows the smaller grain size of the Al/0.32Mo nanocomposite compared to that of pure aluminum. These two structural characteristics (nanocrystalline-amorphous phase and lower surface roughness) are expected to affect the properties of AlN grown on such seeds.

Bottom Line: The effect of sputtering parameters on film properties was assessed.Films grown onto Al/0.32Mo however featured improved surface roughness.Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Alberta, 9211-116th St, Edmonton, Alberta, T6G 2V4, Canada.

ABSTRACT
Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

No MeSH data available.