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Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing.

Troia B, Khokhar AZ, Nedeljkovic M, Reynolds SA, Hu Y, Mashanovich GZ, Passaro VM - Sensors (Basel) (2015)

Bottom Line: In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm.Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%.Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Information Engineering, Politecnico di Bari, Via E. Orabona 4, 70125 Bari, Italy. benedetto.troia@poliba.it.

ABSTRACT
In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved.

No MeSH data available.


(a) Resonant wavelength and (b) power coupling coefficient variations (Δ and Δ, respectively) as a function of SOI rib waveguide fabrication tolerances at the operating wavelength of λ = 1.55 μm.
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sensors-15-13548-f007: (a) Resonant wavelength and (b) power coupling coefficient variations (Δ and Δ, respectively) as a function of SOI rib waveguide fabrication tolerances at the operating wavelength of λ = 1.55 μm.

Mentions: Numerical results plotted in Figure 7a,b confirm the etch depth, E, as the most critical fabrication parameter because a maximum resonant wavelength shift, Δ as large as ±~15 nm can occur, corresponding to a relative percentage shift of roughly ±1%. In addition, the power coupling coefficient variations Δ can be as large as ±0.2 as shown in Figure 7b, where an arc-shaped DC with the nominal gap g0 = 500 nm, = 10 μm, and = 150 μm has been taken into account. Finally, it is worth specifying that the gap g0 is not fixed in simulations but varies as a function of W in the range of ± 20 nm, according to the equation: where is the DC gap corresponding to the nominal waveguide dimensions.


Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing.

Troia B, Khokhar AZ, Nedeljkovic M, Reynolds SA, Hu Y, Mashanovich GZ, Passaro VM - Sensors (Basel) (2015)

(a) Resonant wavelength and (b) power coupling coefficient variations (Δ and Δ, respectively) as a function of SOI rib waveguide fabrication tolerances at the operating wavelength of λ = 1.55 μm.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4507709&req=5

sensors-15-13548-f007: (a) Resonant wavelength and (b) power coupling coefficient variations (Δ and Δ, respectively) as a function of SOI rib waveguide fabrication tolerances at the operating wavelength of λ = 1.55 μm.
Mentions: Numerical results plotted in Figure 7a,b confirm the etch depth, E, as the most critical fabrication parameter because a maximum resonant wavelength shift, Δ as large as ±~15 nm can occur, corresponding to a relative percentage shift of roughly ±1%. In addition, the power coupling coefficient variations Δ can be as large as ±0.2 as shown in Figure 7b, where an arc-shaped DC with the nominal gap g0 = 500 nm, = 10 μm, and = 150 μm has been taken into account. Finally, it is worth specifying that the gap g0 is not fixed in simulations but varies as a function of W in the range of ± 20 nm, according to the equation: where is the DC gap corresponding to the nominal waveguide dimensions.

Bottom Line: In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm.Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%.Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Information Engineering, Politecnico di Bari, Via E. Orabona 4, 70125 Bari, Italy. benedetto.troia@poliba.it.

ABSTRACT
In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved.

No MeSH data available.