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Amorphous silicon p-i-n structure acting as light and temperature sensor.

de Cesare G, Nascetti A, Caputo D - Sensors (Basel) (2015)

Bottom Line: We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K.We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement.We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.

View Article: PubMed Central - PubMed

Affiliation: Department of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, Italy. decesare@diet.uniroma1.it.

ABSTRACT
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.

No MeSH data available.


(a) Structure of the sensor after step 14 of the fabrication process. (b) Photolithographic mask used for the patterning of the via on the SU8 insulation layer.
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sensors-15-12260-f003: (a) Structure of the sensor after step 14 of the fabrication process. (b) Photolithographic mask used for the patterning of the via on the SU8 insulation layer.

Mentions: Deposition by spin coating of a 5 µm-thick SU8 (from Micro-Chem, MA, USA) and its pattering through Mask #3 in Figure 3b for opening via holes over the diodes (Figure 3a). The deposition of the SU-8 film is implemented through the following steps:


Amorphous silicon p-i-n structure acting as light and temperature sensor.

de Cesare G, Nascetti A, Caputo D - Sensors (Basel) (2015)

(a) Structure of the sensor after step 14 of the fabrication process. (b) Photolithographic mask used for the patterning of the via on the SU8 insulation layer.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4507708&req=5

sensors-15-12260-f003: (a) Structure of the sensor after step 14 of the fabrication process. (b) Photolithographic mask used for the patterning of the via on the SU8 insulation layer.
Mentions: Deposition by spin coating of a 5 µm-thick SU8 (from Micro-Chem, MA, USA) and its pattering through Mask #3 in Figure 3b for opening via holes over the diodes (Figure 3a). The deposition of the SU-8 film is implemented through the following steps:

Bottom Line: We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K.We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement.We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.

View Article: PubMed Central - PubMed

Affiliation: Department of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, Italy. decesare@diet.uniroma1.it.

ABSTRACT
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.

No MeSH data available.