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Amorphous silicon p-i-n structure acting as light and temperature sensor.

de Cesare G, Nascetti A, Caputo D - Sensors (Basel) (2015)

Bottom Line: The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction.The device is first characterized as radiation and temperature sensor independently.We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K.

View Article: PubMed Central - PubMed

Affiliation: Department of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, Italy. decesare@diet.uniroma1.it.

ABSTRACT
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.

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(a) Structure of the sensor after step 4 of the fabrication process. (b) Photolithographic mask used for the patterning of ITO bottom electrode of the device.
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sensors-15-12260-f001: (a) Structure of the sensor after step 4 of the fabrication process. (b) Photolithographic mask used for the patterning of ITO bottom electrode of the device.

Mentions: Sputter deposition (in Material Research Corporation system) of 200 nm thick layers from a 6-in-diameter Indium Tin Oxide (ITO) target (with 90% In2O3–10% SnO2 in weight composition), at 200 W of RF power, 2.7 mTorr of pressure process, 25 sccm of argon flow and 120 °C substrate temperature (Figure 1a).


Amorphous silicon p-i-n structure acting as light and temperature sensor.

de Cesare G, Nascetti A, Caputo D - Sensors (Basel) (2015)

(a) Structure of the sensor after step 4 of the fabrication process. (b) Photolithographic mask used for the patterning of ITO bottom electrode of the device.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4507708&req=5

sensors-15-12260-f001: (a) Structure of the sensor after step 4 of the fabrication process. (b) Photolithographic mask used for the patterning of ITO bottom electrode of the device.
Mentions: Sputter deposition (in Material Research Corporation system) of 200 nm thick layers from a 6-in-diameter Indium Tin Oxide (ITO) target (with 90% In2O3–10% SnO2 in weight composition), at 200 W of RF power, 2.7 mTorr of pressure process, 25 sccm of argon flow and 120 °C substrate temperature (Figure 1a).

Bottom Line: The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction.The device is first characterized as radiation and temperature sensor independently.We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K.

View Article: PubMed Central - PubMed

Affiliation: Department of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, Italy. decesare@diet.uniroma1.it.

ABSTRACT
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.

No MeSH data available.


Related in: MedlinePlus