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Nearly isotropic piezoresistive response due to charge detour conduction in nanoparticle thin films.

Jiang CW, Ni IC, Tzeng SD, Kuo W - Sci Rep (2015)

Bottom Line: Disordered interparticle tunneling introduces microscopic detour of charge conduction so as to reduce gauge factors.The disorder also results in large resistance change when current flows in the direction perpendicular to a unidirectional strain, reducing response anisotropy.Cracks form in devices under prolonged cyclic bending and slightly reduce gauge factor.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.

ABSTRACT
Piezoresistive responses of nanoparticle thin-film strain sensors on flexible polyimide substrates were studied. Disordered interparticle tunneling introduces microscopic detour of charge conduction so as to reduce gauge factors. The disorder also results in large resistance change when current flows in the direction perpendicular to a unidirectional strain, reducing response anisotropy. For practical usages, stability and endurance of these strain sensors are confirmed with 7 × 10(4) bending cycles. Cracks form in devices under prolonged cyclic bending and slightly reduce gauge factor.

No MeSH data available.


Related in: MedlinePlus

Anisotropic piezoresisitance of the AuNP films.(a) The resistance changes of a parallel MHA device and a perpendicular MHA device on the same chip when it was cyclically strained. (b–c) schematic of parallel and perpendicular configuration of piezoresistance response.
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f3: Anisotropic piezoresisitance of the AuNP films.(a) The resistance changes of a parallel MHA device and a perpendicular MHA device on the same chip when it was cyclically strained. (b–c) schematic of parallel and perpendicular configuration of piezoresistance response.

Mentions: Next, one should notice that these NP devices show an anisotropic response to the unidirectional strain as schematically shown in Fig. 2c. Previous work confirmed that the transverse interparticle spacing generally does not change in monolayer NP film23. Figure 3a shows a large perpendicular response for 2-electrode MHA devices than that estimated using our theoretical derivation (also see Supporting Information Sec. I). In general, the anisotropy in our devices is surprising low, giving a gauge factor in parallel configuration (Fig. 3b) only slightly larger than that in perpendicular configuration (Fig. 3c).


Nearly isotropic piezoresistive response due to charge detour conduction in nanoparticle thin films.

Jiang CW, Ni IC, Tzeng SD, Kuo W - Sci Rep (2015)

Anisotropic piezoresisitance of the AuNP films.(a) The resistance changes of a parallel MHA device and a perpendicular MHA device on the same chip when it was cyclically strained. (b–c) schematic of parallel and perpendicular configuration of piezoresistance response.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4502517&req=5

f3: Anisotropic piezoresisitance of the AuNP films.(a) The resistance changes of a parallel MHA device and a perpendicular MHA device on the same chip when it was cyclically strained. (b–c) schematic of parallel and perpendicular configuration of piezoresistance response.
Mentions: Next, one should notice that these NP devices show an anisotropic response to the unidirectional strain as schematically shown in Fig. 2c. Previous work confirmed that the transverse interparticle spacing generally does not change in monolayer NP film23. Figure 3a shows a large perpendicular response for 2-electrode MHA devices than that estimated using our theoretical derivation (also see Supporting Information Sec. I). In general, the anisotropy in our devices is surprising low, giving a gauge factor in parallel configuration (Fig. 3b) only slightly larger than that in perpendicular configuration (Fig. 3c).

Bottom Line: Disordered interparticle tunneling introduces microscopic detour of charge conduction so as to reduce gauge factors.The disorder also results in large resistance change when current flows in the direction perpendicular to a unidirectional strain, reducing response anisotropy.Cracks form in devices under prolonged cyclic bending and slightly reduce gauge factor.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.

ABSTRACT
Piezoresistive responses of nanoparticle thin-film strain sensors on flexible polyimide substrates were studied. Disordered interparticle tunneling introduces microscopic detour of charge conduction so as to reduce gauge factors. The disorder also results in large resistance change when current flows in the direction perpendicular to a unidirectional strain, reducing response anisotropy. For practical usages, stability and endurance of these strain sensors are confirmed with 7 × 10(4) bending cycles. Cracks form in devices under prolonged cyclic bending and slightly reduce gauge factor.

No MeSH data available.


Related in: MedlinePlus