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Controlling the on/off current ratio of ferroelectric field-effect transistors.

Katsouras I, Zhao D, Spijkman MJ, Li M, Blom PW, de Leeuw DM, Asadi K - Sci Rep (2015)

Bottom Line: The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations.In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage.The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

View Article: PubMed Central - PubMed

Affiliation: 1] Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany [2] Holst Centre, High Tech Campus 31, 5656AE, Eindhoven, The Netherlands.

ABSTRACT
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

No MeSH data available.


Threshold voltage control in a dual-gate FET.(a) Transfer curves of a polytriarylamine dual-gate field-effect transistor. The channel length and width are 10 μm and 10000 μm respectively. The absolute value of the drain current is presented on a semi-logarithmic scale as a function of the bottom gate bias. The top gate bias is varied from +20 V to −20 V, in 10 V steps. (b) The threshold voltage depends on the top gate bias as ΔVth = −Ctop/Cbottom ×VG, top, where Ctop and Cbottom are the top and bottom gate capacitances. The inset shows the device layout. The chemical structures of the semiconductor and the top gate dielectric are indicated.
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f2: Threshold voltage control in a dual-gate FET.(a) Transfer curves of a polytriarylamine dual-gate field-effect transistor. The channel length and width are 10 μm and 10000 μm respectively. The absolute value of the drain current is presented on a semi-logarithmic scale as a function of the bottom gate bias. The top gate bias is varied from +20 V to −20 V, in 10 V steps. (b) The threshold voltage depends on the top gate bias as ΔVth = −Ctop/Cbottom ×VG, top, where Ctop and Cbottom are the top and bottom gate capacitances. The inset shows the device layout. The chemical structures of the semiconductor and the top gate dielectric are indicated.

Mentions: As a first step, we characterized the performance of a conventional non-ferroelectric dual-gate FET. The transfer curves were obtained by scanning the voltage on the bottom gate for various fixed top gate biases. The voltages on both gates were varied independently. The measurements are illustrated in Fig. 2a. At zero top gate bias, the device behaves as a regular field-effect transistor. The saturated source-drain current is about 1 μA and the threshold voltage is about zero volt. Figure 2a shows that the threshold voltage shifts systematically with the applied top gate bias.


Controlling the on/off current ratio of ferroelectric field-effect transistors.

Katsouras I, Zhao D, Spijkman MJ, Li M, Blom PW, de Leeuw DM, Asadi K - Sci Rep (2015)

Threshold voltage control in a dual-gate FET.(a) Transfer curves of a polytriarylamine dual-gate field-effect transistor. The channel length and width are 10 μm and 10000 μm respectively. The absolute value of the drain current is presented on a semi-logarithmic scale as a function of the bottom gate bias. The top gate bias is varied from +20 V to −20 V, in 10 V steps. (b) The threshold voltage depends on the top gate bias as ΔVth = −Ctop/Cbottom ×VG, top, where Ctop and Cbottom are the top and bottom gate capacitances. The inset shows the device layout. The chemical structures of the semiconductor and the top gate dielectric are indicated.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4498189&req=5

f2: Threshold voltage control in a dual-gate FET.(a) Transfer curves of a polytriarylamine dual-gate field-effect transistor. The channel length and width are 10 μm and 10000 μm respectively. The absolute value of the drain current is presented on a semi-logarithmic scale as a function of the bottom gate bias. The top gate bias is varied from +20 V to −20 V, in 10 V steps. (b) The threshold voltage depends on the top gate bias as ΔVth = −Ctop/Cbottom ×VG, top, where Ctop and Cbottom are the top and bottom gate capacitances. The inset shows the device layout. The chemical structures of the semiconductor and the top gate dielectric are indicated.
Mentions: As a first step, we characterized the performance of a conventional non-ferroelectric dual-gate FET. The transfer curves were obtained by scanning the voltage on the bottom gate for various fixed top gate biases. The voltages on both gates were varied independently. The measurements are illustrated in Fig. 2a. At zero top gate bias, the device behaves as a regular field-effect transistor. The saturated source-drain current is about 1 μA and the threshold voltage is about zero volt. Figure 2a shows that the threshold voltage shifts systematically with the applied top gate bias.

Bottom Line: The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations.In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage.The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

View Article: PubMed Central - PubMed

Affiliation: 1] Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany [2] Holst Centre, High Tech Campus 31, 5656AE, Eindhoven, The Netherlands.

ABSTRACT
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

No MeSH data available.