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High efficiency silicon solar cell based on asymmetric nanowire.

Ko MD, Rim T, Kim K, Meyyappan M, Baek CK - Sci Rep (2015)

Bottom Line: A maximum short circuit current density of 27.5 mA/cm(2) and an efficiency of 7.53% were realized without anti-reflection coating.Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density.The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH),77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea.

ABSTRACT
Improving the efficiency of solar cells through novel materials and devices is critical to realize the full potential of solar energy to meet the growing worldwide energy demands. We present here a highly efficient radial p-n junction silicon solar cell using an asymmetric nanowire structure with a shorter bottom core diameter than at the top. A maximum short circuit current density of 27.5 mA/cm(2) and an efficiency of 7.53% were realized without anti-reflection coating. Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density. From numerical simulation and measurement of the optical characteristics, the total reflection on the sidewalls is seen to increase the light trapping path and charge carrier generation in the radial junction of the asymmetric SiNW, yielding high external quantum efficiency and short circuit current density. The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.

No MeSH data available.


Related in: MedlinePlus

Performance of the asymmetric SiNW solar cells.(a) Measured output current density-voltage curves under A.M1.5G illumination of the symmetric SiNW solar cell with DT of 370 nm (red), and asymmetric SiNW solar cells with DB of 350 nm (blue), 320 nm (green), and 290 nm (pink). (b) Current density-voltage curves under dark condition of the symmetric SiNW solar cell (red), and asymmetric SiNW solar cells with DB of 290 nm (blue).
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f3: Performance of the asymmetric SiNW solar cells.(a) Measured output current density-voltage curves under A.M1.5G illumination of the symmetric SiNW solar cell with DT of 370 nm (red), and asymmetric SiNW solar cells with DB of 350 nm (blue), 320 nm (green), and 290 nm (pink). (b) Current density-voltage curves under dark condition of the symmetric SiNW solar cell (red), and asymmetric SiNW solar cells with DB of 290 nm (blue).

Mentions: The J-V characteristics are presented in Fig. 3a and Table 1 for four types of SiNW solar cells under AM 1.5 G illumination with 100 mW/cm2, which show that the electrical properties of the SiNW solar cell are improved by shrinking the DB of the SiNW. When DB of the SiNW cells decreases from 370 to 350, 320, and 290 nm, their short circuit current density (JSC) increases from 20.4 to 22.1, 24.8, and 27.5 mA/cm2, respectively, and the efficiency (η) also increases from 5.26 to 6.11, 6.37, and 7.53%, respectively.


High efficiency silicon solar cell based on asymmetric nanowire.

Ko MD, Rim T, Kim K, Meyyappan M, Baek CK - Sci Rep (2015)

Performance of the asymmetric SiNW solar cells.(a) Measured output current density-voltage curves under A.M1.5G illumination of the symmetric SiNW solar cell with DT of 370 nm (red), and asymmetric SiNW solar cells with DB of 350 nm (blue), 320 nm (green), and 290 nm (pink). (b) Current density-voltage curves under dark condition of the symmetric SiNW solar cell (red), and asymmetric SiNW solar cells with DB of 290 nm (blue).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4495391&req=5

f3: Performance of the asymmetric SiNW solar cells.(a) Measured output current density-voltage curves under A.M1.5G illumination of the symmetric SiNW solar cell with DT of 370 nm (red), and asymmetric SiNW solar cells with DB of 350 nm (blue), 320 nm (green), and 290 nm (pink). (b) Current density-voltage curves under dark condition of the symmetric SiNW solar cell (red), and asymmetric SiNW solar cells with DB of 290 nm (blue).
Mentions: The J-V characteristics are presented in Fig. 3a and Table 1 for four types of SiNW solar cells under AM 1.5 G illumination with 100 mW/cm2, which show that the electrical properties of the SiNW solar cell are improved by shrinking the DB of the SiNW. When DB of the SiNW cells decreases from 370 to 350, 320, and 290 nm, their short circuit current density (JSC) increases from 20.4 to 22.1, 24.8, and 27.5 mA/cm2, respectively, and the efficiency (η) also increases from 5.26 to 6.11, 6.37, and 7.53%, respectively.

Bottom Line: A maximum short circuit current density of 27.5 mA/cm(2) and an efficiency of 7.53% were realized without anti-reflection coating.Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density.The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH),77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea.

ABSTRACT
Improving the efficiency of solar cells through novel materials and devices is critical to realize the full potential of solar energy to meet the growing worldwide energy demands. We present here a highly efficient radial p-n junction silicon solar cell using an asymmetric nanowire structure with a shorter bottom core diameter than at the top. A maximum short circuit current density of 27.5 mA/cm(2) and an efficiency of 7.53% were realized without anti-reflection coating. Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density. From numerical simulation and measurement of the optical characteristics, the total reflection on the sidewalls is seen to increase the light trapping path and charge carrier generation in the radial junction of the asymmetric SiNW, yielding high external quantum efficiency and short circuit current density. The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.

No MeSH data available.


Related in: MedlinePlus