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Indium Tin Oxide Nanowire Networks as Effective UV/Vis Photodetection Platforms.

Zhao S, Choi D, Lee T, Boyd AK, Barbara P, Van Keuren E, Hahm JI - J Phys Chem C Nanomater Interfaces (2014)

Bottom Line: The photoresponsivity of the ITO NW devices ranges from 0.07 to 0.2 A/W at a 3 V bias, whose values are in the performance range of most commercial UV/vis photodetectors.Such useful photodetector characteristics from our ITO NW mesh devices are attained straightforwardly without the need for complicated fabrication procedures involving highly specialized lithographic tools.Therefore, our approach of ITO NW network-based photodetectors can serve as a convenient alternative to commercial or single NW-based devices.

View Article: PubMed Central - PubMed

Affiliation: Department of Chemistry, Georgetown University , 37th & O Streets NW, Washington, DC 20057, United States ; College of Science, China University of Petroleum , Beijing 102249, People's Republic of China.

ABSTRACT

We demonstrate that indium tin oxide nanowires (ITO NWs) and cationic polymer-modified ITO NWs configured in a network format can be used as high performing UV/vis photodetectors. The photovoltage response of ITO NWs is much higher than similarly constructed devices made from tin oxide, zinc tin oxide, and zinc oxide nanostructures. The ITO NW mesh-based devices exhibit a substantial photovoltage (31-100 mV under illumination with a 1.14 mW 543 nm laser) and photocurrent (225-325 μA at 3 V). The response time of the devices is fast with a rise time of 20-30 μs and a decay time of 1.5-3.7 ms when probed with a 355 nm pulsed laser. The photoresponsivity of the ITO NW devices ranges from 0.07 to 0.2 A/W at a 3 V bias, whose values are in the performance range of most commercial UV/vis photodetectors. Such useful photodetector characteristics from our ITO NW mesh devices are attained straightforwardly without the need for complicated fabrication procedures involving highly specialized lithographic tools. Therefore, our approach of ITO NW network-based photodetectors can serve as a convenient alternative to commercial or single NW-based devices.

No MeSH data available.


Related in: MedlinePlus

(a) 4 × 4 μm SEM images displaying typicalCVD-grownstructures of SnO2 NWs, ZTO NBs, ZnO NRs, and ITO NWs.(b) A 2 × 2 μm, zoomed-in SEM panel shows the structureof individual ITO NWs. XRD data of as-grown ITO NWs are also providedalong with a schematic representation of the atomic arrangements inITO NW crystals. (c) Schematic diagram of our overall photoelectricmeasurement setup.
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fig1: (a) 4 × 4 μm SEM images displaying typicalCVD-grownstructures of SnO2 NWs, ZTO NBs, ZnO NRs, and ITO NWs.(b) A 2 × 2 μm, zoomed-in SEM panel shows the structureof individual ITO NWs. XRD data of as-grown ITO NWs are also providedalong with a schematic representation of the atomic arrangements inITO NW crystals. (c) Schematic diagram of our overall photoelectricmeasurement setup.

Mentions: Figure 1(a) displays representative 4 ×4 μm SEM panels for as-grown SnO2, ZTO, ZnO, andITO nanomaterials. Nanowire (NW)-like structures are observed fromSnO2 and ITO plates, whereas nanorod (NR) and nanobelt(NB) structures are found from the ZnO and ZTO plates, respectively.The average diameter of SnO2 NWs (35.7 ± 2.0 nm) issimilar to that of ITO NWs (40 ± 1.5 nm), whereas the diameterof ZTO NBs (333 ± 45 nm) is similar to that of ZnO NRs (300 ±15 nm). Figure 1(b) shows a magnified SEM paneland X-ray diffraction (XRD) data of ITO NWs, the material of focusin this paper. XRD peaks positioned at 30.45°, 35.28°, 50.80°,and 60.40° correspond to (222), (400), (440), and (622) ITO NWplanes in the cubic crystal structure of bixbyite Mn2O3 I type (C-type rare-earth oxide structure), respectively.The atomic arrangements of In, Sn, and O in the ITO NWs are depictedin the crystal structure model provided in Figure 1(b). Our overall experimental scheme for the nanomaterialnetwork photoelectric measurements is displayed in Figure 1(c).


Indium Tin Oxide Nanowire Networks as Effective UV/Vis Photodetection Platforms.

Zhao S, Choi D, Lee T, Boyd AK, Barbara P, Van Keuren E, Hahm JI - J Phys Chem C Nanomater Interfaces (2014)

(a) 4 × 4 μm SEM images displaying typicalCVD-grownstructures of SnO2 NWs, ZTO NBs, ZnO NRs, and ITO NWs.(b) A 2 × 2 μm, zoomed-in SEM panel shows the structureof individual ITO NWs. XRD data of as-grown ITO NWs are also providedalong with a schematic representation of the atomic arrangements inITO NW crystals. (c) Schematic diagram of our overall photoelectricmeasurement setup.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4494646&req=5

fig1: (a) 4 × 4 μm SEM images displaying typicalCVD-grownstructures of SnO2 NWs, ZTO NBs, ZnO NRs, and ITO NWs.(b) A 2 × 2 μm, zoomed-in SEM panel shows the structureof individual ITO NWs. XRD data of as-grown ITO NWs are also providedalong with a schematic representation of the atomic arrangements inITO NW crystals. (c) Schematic diagram of our overall photoelectricmeasurement setup.
Mentions: Figure 1(a) displays representative 4 ×4 μm SEM panels for as-grown SnO2, ZTO, ZnO, andITO nanomaterials. Nanowire (NW)-like structures are observed fromSnO2 and ITO plates, whereas nanorod (NR) and nanobelt(NB) structures are found from the ZnO and ZTO plates, respectively.The average diameter of SnO2 NWs (35.7 ± 2.0 nm) issimilar to that of ITO NWs (40 ± 1.5 nm), whereas the diameterof ZTO NBs (333 ± 45 nm) is similar to that of ZnO NRs (300 ±15 nm). Figure 1(b) shows a magnified SEM paneland X-ray diffraction (XRD) data of ITO NWs, the material of focusin this paper. XRD peaks positioned at 30.45°, 35.28°, 50.80°,and 60.40° correspond to (222), (400), (440), and (622) ITO NWplanes in the cubic crystal structure of bixbyite Mn2O3 I type (C-type rare-earth oxide structure), respectively.The atomic arrangements of In, Sn, and O in the ITO NWs are depictedin the crystal structure model provided in Figure 1(b). Our overall experimental scheme for the nanomaterialnetwork photoelectric measurements is displayed in Figure 1(c).

Bottom Line: The photoresponsivity of the ITO NW devices ranges from 0.07 to 0.2 A/W at a 3 V bias, whose values are in the performance range of most commercial UV/vis photodetectors.Such useful photodetector characteristics from our ITO NW mesh devices are attained straightforwardly without the need for complicated fabrication procedures involving highly specialized lithographic tools.Therefore, our approach of ITO NW network-based photodetectors can serve as a convenient alternative to commercial or single NW-based devices.

View Article: PubMed Central - PubMed

Affiliation: Department of Chemistry, Georgetown University , 37th & O Streets NW, Washington, DC 20057, United States ; College of Science, China University of Petroleum , Beijing 102249, People's Republic of China.

ABSTRACT

We demonstrate that indium tin oxide nanowires (ITO NWs) and cationic polymer-modified ITO NWs configured in a network format can be used as high performing UV/vis photodetectors. The photovoltage response of ITO NWs is much higher than similarly constructed devices made from tin oxide, zinc tin oxide, and zinc oxide nanostructures. The ITO NW mesh-based devices exhibit a substantial photovoltage (31-100 mV under illumination with a 1.14 mW 543 nm laser) and photocurrent (225-325 μA at 3 V). The response time of the devices is fast with a rise time of 20-30 μs and a decay time of 1.5-3.7 ms when probed with a 355 nm pulsed laser. The photoresponsivity of the ITO NW devices ranges from 0.07 to 0.2 A/W at a 3 V bias, whose values are in the performance range of most commercial UV/vis photodetectors. Such useful photodetector characteristics from our ITO NW mesh devices are attained straightforwardly without the need for complicated fabrication procedures involving highly specialized lithographic tools. Therefore, our approach of ITO NW network-based photodetectors can serve as a convenient alternative to commercial or single NW-based devices.

No MeSH data available.


Related in: MedlinePlus