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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.

Cao R, Huang G, Di Z, Zhu G, Mei Y - Nanoscale Res Lett (2014)

Bottom Line: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure.The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage.FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.

ABSTRACT
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

No MeSH data available.


Related in: MedlinePlus

Drain and gate voltage dependence of the transfer characteristics of SiNM-based FeFETs. (a) Drain and (b) gate voltage dependence of the transfer characteristics. Inset shows the dependence of the width of memory window on Vgmax.
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Fig3: Drain and gate voltage dependence of the transfer characteristics of SiNM-based FeFETs. (a) Drain and (b) gate voltage dependence of the transfer characteristics. Inset shows the dependence of the width of memory window on Vgmax.

Mentions: To present a complete view of the electrical properties in the current devices, we also measured the transfer characteristics at various Vds and noticed that Vds had significant influence on the memory window, especially the device’s on/off ratio. The change of the transfer loops with Vds is shown in Figure 3a, where gate voltage was swept between ±8 V. The width of memory windows almost remains constant at about 0.75 V, regardless of Vds values. However, the device’s on/off ratio reduces significantly from 102 to 101 with the decrease of Vds from 3 to 0.5 V.Figure 3


Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.

Cao R, Huang G, Di Z, Zhu G, Mei Y - Nanoscale Res Lett (2014)

Drain and gate voltage dependence of the transfer characteristics of SiNM-based FeFETs. (a) Drain and (b) gate voltage dependence of the transfer characteristics. Inset shows the dependence of the width of memory window on Vgmax.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4494014&req=5

Fig3: Drain and gate voltage dependence of the transfer characteristics of SiNM-based FeFETs. (a) Drain and (b) gate voltage dependence of the transfer characteristics. Inset shows the dependence of the width of memory window on Vgmax.
Mentions: To present a complete view of the electrical properties in the current devices, we also measured the transfer characteristics at various Vds and noticed that Vds had significant influence on the memory window, especially the device’s on/off ratio. The change of the transfer loops with Vds is shown in Figure 3a, where gate voltage was swept between ±8 V. The width of memory windows almost remains constant at about 0.75 V, regardless of Vds values. However, the device’s on/off ratio reduces significantly from 102 to 101 with the decrease of Vds from 3 to 0.5 V.Figure 3

Bottom Line: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure.The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage.FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.

ABSTRACT
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

No MeSH data available.


Related in: MedlinePlus