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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.

Cao R, Huang G, Di Z, Zhu G, Mei Y - Nanoscale Res Lett (2014)

Bottom Line: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure.The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage.FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.

ABSTRACT
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

No MeSH data available.


Related in: MedlinePlus

Output and transfer and leakage characteristics SiNM-based FeFETs. (a) Output and (b) transfer and leakage characteristics. Insets show the schematic diagram of operation mechanism.
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Fig2: Output and transfer and leakage characteristics SiNM-based FeFETs. (a) Output and (b) transfer and leakage characteristics. Insets show the schematic diagram of operation mechanism.

Mentions: The output characteristics of the SiNM-based FeFETs are shown in Figure 2a. The source-drain voltage (Vds) was swept from 0 to 3 V, while the gate voltage (Vg) changed between +4 and -4 V. A typical output characteristic of SiNM-based field effect transistors is observed. The source-drain current (Ids) is hard to be saturated at positive Vg, though the maximum Vds is set to 3 V. This should be due to the fact that the substrate is not electrically grounded and the potential of the SiNMs increases when the current flows through the PN junction of the drain, causing the increase of the channel conductance.Figure 2


Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.

Cao R, Huang G, Di Z, Zhu G, Mei Y - Nanoscale Res Lett (2014)

Output and transfer and leakage characteristics SiNM-based FeFETs. (a) Output and (b) transfer and leakage characteristics. Insets show the schematic diagram of operation mechanism.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4494014&req=5

Fig2: Output and transfer and leakage characteristics SiNM-based FeFETs. (a) Output and (b) transfer and leakage characteristics. Insets show the schematic diagram of operation mechanism.
Mentions: The output characteristics of the SiNM-based FeFETs are shown in Figure 2a. The source-drain voltage (Vds) was swept from 0 to 3 V, while the gate voltage (Vg) changed between +4 and -4 V. A typical output characteristic of SiNM-based field effect transistors is observed. The source-drain current (Ids) is hard to be saturated at positive Vg, though the maximum Vds is set to 3 V. This should be due to the fact that the substrate is not electrically grounded and the potential of the SiNMs increases when the current flows through the PN junction of the drain, causing the increase of the channel conductance.Figure 2

Bottom Line: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure.The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage.FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.

ABSTRACT
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

No MeSH data available.


Related in: MedlinePlus