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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.

Cao R, Huang G, Di Z, Zhu G, Mei Y - Nanoscale Res Lett (2014)

Bottom Line: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure.The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage.FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.

ABSTRACT
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

No MeSH data available.


Schematic, optical microscope image, and TEM cross-section images. (a) Schematic of SiNM-based FeFET devices, (b) Optical microscope image of the electrical measurements by probe method, and (c, d) TEM cross-section images of SiNMs.
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Fig1: Schematic, optical microscope image, and TEM cross-section images. (a) Schematic of SiNM-based FeFET devices, (b) Optical microscope image of the electrical measurements by probe method, and (c, d) TEM cross-section images of SiNMs.

Mentions: The device structure is shown as the inset in Figure 1a. The original SiNMs with a boron doping level of 1015 cm-3 (part of SOI wafer with Si/SiO2 thickness of 50/150 nm) were bought from SOITEC Inc. (Bernin, Isère, France), and the TEM cross-section images of SiNM are shown in Figure 1c,d. Al electrodes (100 nm thick) were first deposited onto SiNMs by electron beam evaporation with a hard mask to form source and drain patterns with a channel length of 80 μm and a width of 1 mm. The source and drain were not further implanted. Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition. Ferroelectric poly (vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] copolymer films with VDF/TrFE molar ratio of 77/23 were spin-coated onto the Al2O3 layer and then annealed at 138°C for 5 h to increase their degree of crystallinity. The thickness of annealed ferroelectric films was about 100 nm, determined by a scanning probe microscope (UltraObjective, Surface Imaging Systems, Herzogenrath, Germany). Finally, 100-nm thick Al electrodes were thermally evaporated to form the gate electrode. Electrical measurements were performed in a dark environment by probe method with Keithley 4200 semiconductor parameter analyzer (Keithley Instruments Inc., Cleveland, Ohio, USA), as shown in Figure 1b. During all electrical measurements, the source electrode was electrically grounded.Figure 1


Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.

Cao R, Huang G, Di Z, Zhu G, Mei Y - Nanoscale Res Lett (2014)

Schematic, optical microscope image, and TEM cross-section images. (a) Schematic of SiNM-based FeFET devices, (b) Optical microscope image of the electrical measurements by probe method, and (c, d) TEM cross-section images of SiNMs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4494014&req=5

Fig1: Schematic, optical microscope image, and TEM cross-section images. (a) Schematic of SiNM-based FeFET devices, (b) Optical microscope image of the electrical measurements by probe method, and (c, d) TEM cross-section images of SiNMs.
Mentions: The device structure is shown as the inset in Figure 1a. The original SiNMs with a boron doping level of 1015 cm-3 (part of SOI wafer with Si/SiO2 thickness of 50/150 nm) were bought from SOITEC Inc. (Bernin, Isère, France), and the TEM cross-section images of SiNM are shown in Figure 1c,d. Al electrodes (100 nm thick) were first deposited onto SiNMs by electron beam evaporation with a hard mask to form source and drain patterns with a channel length of 80 μm and a width of 1 mm. The source and drain were not further implanted. Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition. Ferroelectric poly (vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] copolymer films with VDF/TrFE molar ratio of 77/23 were spin-coated onto the Al2O3 layer and then annealed at 138°C for 5 h to increase their degree of crystallinity. The thickness of annealed ferroelectric films was about 100 nm, determined by a scanning probe microscope (UltraObjective, Surface Imaging Systems, Herzogenrath, Germany). Finally, 100-nm thick Al electrodes were thermally evaporated to form the gate electrode. Electrical measurements were performed in a dark environment by probe method with Keithley 4200 semiconductor parameter analyzer (Keithley Instruments Inc., Cleveland, Ohio, USA), as shown in Figure 1b. During all electrical measurements, the source electrode was electrically grounded.Figure 1

Bottom Line: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure.The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage.FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.

ABSTRACT
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

No MeSH data available.