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RRAM characteristics using a new Cr/GdOx/TiN structure.

Jana D, Dutta M, Samanta S, Maikap S - Nanoscale Res Lett (2014)

Bottom Line: After measuring 50 RRAM devices randomly, the 8-μm devices exhibit superior resistive switching characteristics than those of the 0.4-μm devices owing to higher recombination rate of oxygen with remaining conducting filament in the GdOx film as well as larger interface area, even with a thinner GdOx film of 9 nm.The GdOx film thickness dependence RRAM characteristics have been discussed also.Memory device shows repeatable 100 switching cycles, good device-to-device uniformity with a switching yield of approximately 80%, long read endurance of >10(5) cycles, and good data retention of >3 × 10(4) s at a CC of 300 μA.

View Article: PubMed Central - PubMed

Affiliation: Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 333, Taiwan, debanjan.jana@gmail.com.

ABSTRACT
Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdOx film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a transmission electron microscope (TEM) image. All elements and GdOx film are confirmed by energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy analyses. Repeatable resistive switching characteristics at a current compliance (CC) of 300 μA and low operating voltage of ±4 V are observed. The switching mechanism is based on the oxygen vacancy filament formation/rupture through GdOx grain boundaries under external bias. After measuring 50 RRAM devices randomly, the 8-μm devices exhibit superior resistive switching characteristics than those of the 0.4-μm devices owing to higher recombination rate of oxygen with remaining conducting filament in the GdOx film as well as larger interface area, even with a thinner GdOx film of 9 nm. The GdOx film thickness dependence RRAM characteristics have been discussed also. Memory device shows repeatable 100 switching cycles, good device-to-device uniformity with a switching yield of approximately 80%, long read endurance of >10(5) cycles, and good data retention of >3 × 10(4) s at a CC of 300 μA.

No MeSH data available.


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Read endurance and data retention characteristics. (a) Long read pulse endurance of >105 cycles and (b) long data retention of >3 × 104 s of the 8-μm devices are obtained. The thickness of GdOx film is 17 nm.
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Fig9: Read endurance and data retention characteristics. (a) Long read pulse endurance of >105 cycles and (b) long data retention of >3 × 104 s of the 8-μm devices are obtained. The thickness of GdOx film is 17 nm.

Mentions: Figure 8a represents I-V characteristics of successive 90 cycles with good uniformity for the 8-μm devices with a GdOx film of 17 nm. This is also confirmed by current distribution of HRS and LRS at a read voltage (Vread) of +0.2 V, as shown in Figure 8b. The memory devices show an excellent cycle-to-cycle uniformity. The average value (μ) of current in HRS and LRS at a Vread of +0.2 V are 290 nA and 32.6 μA respectively and standard deviations (σ) are 0.19 and 9.84, respectively. The memory device performs P/E endurance of >100 cycles with a resistance ratio of >5, as shown in Figure 8c. The P/E voltage was +2.5/-2 V and pulse width was 500 μs. The programming and erasing currents were 300 and 500 μA, respectively. Figure 9 shows read endurance and data retention characteristics of the 8-μm devices with a GdOx film of 17 nm. Figure 9a represents long read endurance characteristics of >105 cycles. Stress pulse width was 500 μs. The read pulse width was 10 ms. Both resistance states were read out at +0.2 V. After 105 cycles, good resistance ratio is found to be >100. Figure 9b exhibits good data retention for more than 3 × 104 s with a resistance ratio of >70. Before a data retention test, the device with a size of 8 μm was programmed or erased at a CC of 300 μA. This new RRAM device is very useful for future nanoscale non-volatile memory applications.Figure 8


RRAM characteristics using a new Cr/GdOx/TiN structure.

Jana D, Dutta M, Samanta S, Maikap S - Nanoscale Res Lett (2014)

Read endurance and data retention characteristics. (a) Long read pulse endurance of >105 cycles and (b) long data retention of >3 × 104 s of the 8-μm devices are obtained. The thickness of GdOx film is 17 nm.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493994&req=5

Fig9: Read endurance and data retention characteristics. (a) Long read pulse endurance of >105 cycles and (b) long data retention of >3 × 104 s of the 8-μm devices are obtained. The thickness of GdOx film is 17 nm.
Mentions: Figure 8a represents I-V characteristics of successive 90 cycles with good uniformity for the 8-μm devices with a GdOx film of 17 nm. This is also confirmed by current distribution of HRS and LRS at a read voltage (Vread) of +0.2 V, as shown in Figure 8b. The memory devices show an excellent cycle-to-cycle uniformity. The average value (μ) of current in HRS and LRS at a Vread of +0.2 V are 290 nA and 32.6 μA respectively and standard deviations (σ) are 0.19 and 9.84, respectively. The memory device performs P/E endurance of >100 cycles with a resistance ratio of >5, as shown in Figure 8c. The P/E voltage was +2.5/-2 V and pulse width was 500 μs. The programming and erasing currents were 300 and 500 μA, respectively. Figure 9 shows read endurance and data retention characteristics of the 8-μm devices with a GdOx film of 17 nm. Figure 9a represents long read endurance characteristics of >105 cycles. Stress pulse width was 500 μs. The read pulse width was 10 ms. Both resistance states were read out at +0.2 V. After 105 cycles, good resistance ratio is found to be >100. Figure 9b exhibits good data retention for more than 3 × 104 s with a resistance ratio of >70. Before a data retention test, the device with a size of 8 μm was programmed or erased at a CC of 300 μA. This new RRAM device is very useful for future nanoscale non-volatile memory applications.Figure 8

Bottom Line: After measuring 50 RRAM devices randomly, the 8-μm devices exhibit superior resistive switching characteristics than those of the 0.4-μm devices owing to higher recombination rate of oxygen with remaining conducting filament in the GdOx film as well as larger interface area, even with a thinner GdOx film of 9 nm.The GdOx film thickness dependence RRAM characteristics have been discussed also.Memory device shows repeatable 100 switching cycles, good device-to-device uniformity with a switching yield of approximately 80%, long read endurance of >10(5) cycles, and good data retention of >3 × 10(4) s at a CC of 300 μA.

View Article: PubMed Central - PubMed

Affiliation: Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 333, Taiwan, debanjan.jana@gmail.com.

ABSTRACT
Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdOx film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a transmission electron microscope (TEM) image. All elements and GdOx film are confirmed by energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy analyses. Repeatable resistive switching characteristics at a current compliance (CC) of 300 μA and low operating voltage of ±4 V are observed. The switching mechanism is based on the oxygen vacancy filament formation/rupture through GdOx grain boundaries under external bias. After measuring 50 RRAM devices randomly, the 8-μm devices exhibit superior resistive switching characteristics than those of the 0.4-μm devices owing to higher recombination rate of oxygen with remaining conducting filament in the GdOx film as well as larger interface area, even with a thinner GdOx film of 9 nm. The GdOx film thickness dependence RRAM characteristics have been discussed also. Memory device shows repeatable 100 switching cycles, good device-to-device uniformity with a switching yield of approximately 80%, long read endurance of >10(5) cycles, and good data retention of >3 × 10(4) s at a CC of 300 μA.

No MeSH data available.


Related in: MedlinePlus