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AlGaInP LED with low-speed spin-coating silver nanowires as transparent conductive layer.

Guo X, Guo CW, Wang C, Li C, Sun XM - Nanoscale Res Lett (2014)

Bottom Line: The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO.The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process.Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored.

View Article: PubMed Central - PubMed

Affiliation: Photonic Research Lab, Beijing University of Technology, Beijing, 100124, People's Republic of China, guo@bjut.edu.cn.

ABSTRACT
The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO. The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process. Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored. The optical output power enhanced 100%, and the wavelength redshift decreased from 12 to 3 nm, which indicated the AgNW films prepared by low-speed spin-coating possessed attractive features for large-scale TCL applications in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus

Dependence of optical output power and peak wavelength. (a) The dependence of optical output power on the current injection of LED chips with and without AgNW film as current-spreading layer. (b) The dependence of peak wavelength of AlGaInP LEDs with and without AgNW film on the current injection.
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Fig4: Dependence of optical output power and peak wavelength. (a) The dependence of optical output power on the current injection of LED chips with and without AgNW film as current-spreading layer. (b) The dependence of peak wavelength of AlGaInP LEDs with and without AgNW film on the current injection.

Mentions: Figure 4a demonstrated the optical output power on the current injection of LED with and without AgNW film as TCL. The optical output power and the linearity of LED with AgNW film were much better than that of without AgNW film. At 20 mA, the optical output power of LED with AgNW film was two times of that of without AgNW film. As we known, the optical output power improved only 30% if ITO as TCL on LEDs [26, 27]. Nano or microstructures, such as photonic crystal and surface roughness, could only improve the optical output power about 10% to 30% [28]. The current value corresponding to the maximum optical output power was 60 and 40 mA, respectively, with and without AgNW film, which indicated the better thermal performance. The peak wavelength was 630 and 635 nm, respectively, according to the electroluminescence spectra of LEDs with and without AgNW film at 20 mA. The wavelength redshift was another important criterion to characterize the current-spreading effect, and AlGaInP material was very sensitive to the temperature. Figure 4b demonstrated the wavelength redshift measurement results, in which the dots were the measurement data and the line was the linear fitting of the data. The wavelength redshift was 3 and 12 nm for LEDs with and without AgNW film, respectively, which verified the optical output power results.Figure 4


AlGaInP LED with low-speed spin-coating silver nanowires as transparent conductive layer.

Guo X, Guo CW, Wang C, Li C, Sun XM - Nanoscale Res Lett (2014)

Dependence of optical output power and peak wavelength. (a) The dependence of optical output power on the current injection of LED chips with and without AgNW film as current-spreading layer. (b) The dependence of peak wavelength of AlGaInP LEDs with and without AgNW film on the current injection.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493991&req=5

Fig4: Dependence of optical output power and peak wavelength. (a) The dependence of optical output power on the current injection of LED chips with and without AgNW film as current-spreading layer. (b) The dependence of peak wavelength of AlGaInP LEDs with and without AgNW film on the current injection.
Mentions: Figure 4a demonstrated the optical output power on the current injection of LED with and without AgNW film as TCL. The optical output power and the linearity of LED with AgNW film were much better than that of without AgNW film. At 20 mA, the optical output power of LED with AgNW film was two times of that of without AgNW film. As we known, the optical output power improved only 30% if ITO as TCL on LEDs [26, 27]. Nano or microstructures, such as photonic crystal and surface roughness, could only improve the optical output power about 10% to 30% [28]. The current value corresponding to the maximum optical output power was 60 and 40 mA, respectively, with and without AgNW film, which indicated the better thermal performance. The peak wavelength was 630 and 635 nm, respectively, according to the electroluminescence spectra of LEDs with and without AgNW film at 20 mA. The wavelength redshift was another important criterion to characterize the current-spreading effect, and AlGaInP material was very sensitive to the temperature. Figure 4b demonstrated the wavelength redshift measurement results, in which the dots were the measurement data and the line was the linear fitting of the data. The wavelength redshift was 3 and 12 nm for LEDs with and without AgNW film, respectively, which verified the optical output power results.Figure 4

Bottom Line: The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO.The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process.Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored.

View Article: PubMed Central - PubMed

Affiliation: Photonic Research Lab, Beijing University of Technology, Beijing, 100124, People's Republic of China, guo@bjut.edu.cn.

ABSTRACT
The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO. The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process. Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored. The optical output power enhanced 100%, and the wavelength redshift decreased from 12 to 3 nm, which indicated the AgNW films prepared by low-speed spin-coating possessed attractive features for large-scale TCL applications in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus