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AlGaInP LED with low-speed spin-coating silver nanowires as transparent conductive layer.

Guo X, Guo CW, Wang C, Li C, Sun XM - Nanoscale Res Lett (2014)

Bottom Line: The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO.The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process.Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored.

View Article: PubMed Central - PubMed

Affiliation: Photonic Research Lab, Beijing University of Technology, Beijing, 100124, People's Republic of China, guo@bjut.edu.cn.

ABSTRACT
The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO. The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process. Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored. The optical output power enhanced 100%, and the wavelength redshift decreased from 12 to 3 nm, which indicated the AgNW films prepared by low-speed spin-coating possessed attractive features for large-scale TCL applications in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus

Current-voltage (I-V) curves of AlGaInP LED with and without AgNWs as current-spreading layer. The inset showed microscope photographs of LED wafers before dicing under the current injection of 5 mA under the probe station.
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Fig3: Current-voltage (I-V) curves of AlGaInP LED with and without AgNWs as current-spreading layer. The inset showed microscope photographs of LED wafers before dicing under the current injection of 5 mA under the probe station.

Mentions: Figure 3 showed the current–voltage (I-V) curves of AlGaInP LED with and without AgNWs as current-spreading layer with the voltage drops of 2.08 and 2.18 V at current injection of 20 mA, which indicated better current spreading. The inset showed the microscope photographs of LED wafers before dicing under the current injection of 5 mA under the probe station. It was obvious that the current-spreading effect was totally different, which echoed the I-V measurement results. For the devices without AgNWs, the emission was localized around the electrode, which indicated the carriers transport laterally with limited distance. While for the devices with AgNW film, the whole wafer was lighting up, which demonstrated the excellent capability of lateral carrier transport of AgNW film.Figure 3


AlGaInP LED with low-speed spin-coating silver nanowires as transparent conductive layer.

Guo X, Guo CW, Wang C, Li C, Sun XM - Nanoscale Res Lett (2014)

Current-voltage (I-V) curves of AlGaInP LED with and without AgNWs as current-spreading layer. The inset showed microscope photographs of LED wafers before dicing under the current injection of 5 mA under the probe station.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493991&req=5

Fig3: Current-voltage (I-V) curves of AlGaInP LED with and without AgNWs as current-spreading layer. The inset showed microscope photographs of LED wafers before dicing under the current injection of 5 mA under the probe station.
Mentions: Figure 3 showed the current–voltage (I-V) curves of AlGaInP LED with and without AgNWs as current-spreading layer with the voltage drops of 2.08 and 2.18 V at current injection of 20 mA, which indicated better current spreading. The inset showed the microscope photographs of LED wafers before dicing under the current injection of 5 mA under the probe station. It was obvious that the current-spreading effect was totally different, which echoed the I-V measurement results. For the devices without AgNWs, the emission was localized around the electrode, which indicated the carriers transport laterally with limited distance. While for the devices with AgNW film, the whole wafer was lighting up, which demonstrated the excellent capability of lateral carrier transport of AgNW film.Figure 3

Bottom Line: The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO.The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process.Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored.

View Article: PubMed Central - PubMed

Affiliation: Photonic Research Lab, Beijing University of Technology, Beijing, 100124, People's Republic of China, guo@bjut.edu.cn.

ABSTRACT
The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO. The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process. Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored. The optical output power enhanced 100%, and the wavelength redshift decreased from 12 to 3 nm, which indicated the AgNW films prepared by low-speed spin-coating possessed attractive features for large-scale TCL applications in optoelectronic devices.

No MeSH data available.


Related in: MedlinePlus